Nonlinear response of SiGe waveguides in the mid-infrared

L. Carletti; P. Ma; B. Luther-Davies; D. Hudson; C. Monat; S. Madden; D. J. Moss; M. Brun; S. Ortiz; S. Nicoletti; C. Grillet

doi:10.1117/12.2051689

Nonlinear response of SiGe waveguides in the mid-infrared

L. Carletti^*, P. Ma, B. Luther-Davies, D. Hudson, C. Monat, S. Madden, D. J. Moss, M. Brun, S. Ortiz, S. Nicoletti, C. Grillet

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

Original language	English
Title of host publication	Silicon Photonics and Photonic Integrated Circuits IV
Publisher	SPIE
ISBN (Print)	9781628410815
DOIs	https://doi.org/10.1117/12.2051689
Publication status	Published - 2014
Event	Silicon Photonics and Photonic Integrated Circuits IV - Brussels, Belgium Duration: 14 Apr 2014 → 17 Apr 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9133
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Silicon Photonics and Photonic Integrated Circuits IV
Country/Territory	Belgium
City	Brussels
Period	14/04/14 → 17/04/14

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10.1117/12.2051689

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Carletti, L., Ma, P., Luther-Davies, B., Hudson, D., Monat, C., Madden, S., Moss, D. J., Brun, M., Ortiz, S., Nicoletti, S., & Grillet, C. (2014). Nonlinear response of SiGe waveguides in the mid-infrared. In Silicon Photonics and Photonic Integrated Circuits IV Article 91330M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9133). SPIE. https://doi.org/10.1117/12.2051689

@inproceedings{663e7aa72d034ed784cec3bb78bc9030,

title = "Nonlinear response of SiGe waveguides in the mid-infrared",

abstract = "The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.",

keywords = "Integrated optics, Mid-infrared, Nanowires, Nonlinear optics, Silicon Germanium",

author = "L. Carletti and P. Ma and B. Luther-Davies and D. Hudson and C. Monat and S. Madden and Moss, {D. J.} and M. Brun and S. Ortiz and S. Nicoletti and C. Grillet",

year = "2014",

doi = "10.1117/12.2051689",

language = "English",

isbn = "9781628410815",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

booktitle = "Silicon Photonics and Photonic Integrated Circuits IV",

address = "United States",

note = "Silicon Photonics and Photonic Integrated Circuits IV ; Conference date: 14-04-2014 Through 17-04-2014",

}

Carletti, L, Ma, P, Luther-Davies, B, Hudson, D, Monat, C, Madden, S, Moss, DJ, Brun, M, Ortiz, S, Nicoletti, S & Grillet, C 2014, Nonlinear response of SiGe waveguides in the mid-infrared. in Silicon Photonics and Photonic Integrated Circuits IV., 91330M, Proceedings of SPIE - The International Society for Optical Engineering, vol. 9133, SPIE, Silicon Photonics and Photonic Integrated Circuits IV, Brussels, Belgium, 14/04/14. https://doi.org/10.1117/12.2051689

Nonlinear response of SiGe waveguides in the mid-infrared. / Carletti, L.; Ma, P.; Luther-Davies, B. et al.
Silicon Photonics and Photonic Integrated Circuits IV. SPIE, 2014. 91330M (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 9133).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Nonlinear response of SiGe waveguides in the mid-infrared

AU - Carletti, L.

AU - Ma, P.

AU - Luther-Davies, B.

AU - Hudson, D.

AU - Monat, C.

AU - Madden, S.

AU - Moss, D. J.

AU - Brun, M.

AU - Ortiz, S.

AU - Nicoletti, S.

AU - Grillet, C.

PY - 2014

Y1 - 2014

N2 - The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

AB - The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

KW - Integrated optics

KW - Mid-infrared

KW - Nanowires

KW - Nonlinear optics

KW - Silicon Germanium

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DO - 10.1117/12.2051689

M3 - Conference contribution

SN - 9781628410815

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Silicon Photonics and Photonic Integrated Circuits IV

PB - SPIE

T2 - Silicon Photonics and Photonic Integrated Circuits IV

Y2 - 14 April 2014 through 17 April 2014

ER -

Nonlinear response of SiGe waveguides in the mid-infrared

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