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Nonlinear response of SiGe waveguides in the mid-infrared

  • L. Carletti*
  • , P. Ma
  • , B. Luther-Davies
  • , D. Hudson
  • , C. Monat
  • , S. Madden
  • , D. J. Moss
  • , M. Brun
  • , S. Ortiz
  • , S. Nicoletti
  • , C. Grillet
  • *Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

    1 Citation (Scopus)

    Abstract

    The linear and nonlinear optical response of SiGe waveguides in the mid-infrared are experimentally measured. By cutback measurements we find the linear losses to be less than 1.5dB/cm between 3μm and 5μm, with a record low loss of 0.5dB/cm at a wavelength of 4.75μm. By launching picosecond pulses between 3.25μm and 4.75μm into the waveguides and measuring both their self-phase modulation and nonlinear transmission we find that nonlinear losses can be significant in this wavelength range due to free-carrier absorption induced by multi-photon absorption. This should be considered when engineering SiGe photonic devices for nonlinear applications in the mid-IR.

    Original languageEnglish
    Title of host publicationSilicon Photonics and Photonic Integrated Circuits IV
    PublisherSPIE
    ISBN (Print)9781628410815
    DOIs
    Publication statusPublished - 2014
    EventSilicon Photonics and Photonic Integrated Circuits IV - Brussels, Belgium
    Duration: 14 Apr 2014 → 17 Apr 2014

    Publication series

    NameProceedings of SPIE - The International Society for Optical Engineering
    Volume9133
    ISSN (Print)0277-786X
    ISSN (Electronic)1996-756X

    Conference

    ConferenceSilicon Photonics and Photonic Integrated Circuits IV
    Country/TerritoryBelgium
    CityBrussels
    Period14/04/14 → 17/04/14

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