Nonvolatile memories using deep traps formed in Al2 O 3 by metal ion implantation

Min Choul Kim, Seung Hui Hong, Hye Ryong Kim, Sung Kim, Suk Ho Choi*, R. G. Elliman, S. P. Russo

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    11 Citations (Scopus)


    We demonstrate the feasibility of an approach to nonvolatile memory (NVM) that exploits charge trapping at deep-energy levels formed in Al2 O3 by metal doping. Our calculations show that V and Nb are expected to form such deep energy levels in the band gap of Al2 O3. To demonstrate the effectiveness of this approach these metal ions were ion-implanted into test structures based on an Al2 O3 trapping layer. Several structural analysis techniques and photocurrent spectroscopy show that the doped metal ions are located close to the Al 2 O3 / SiO2 interface and exhibit characteristics consistent with some of the deep levels predicted in calculations. The resulting test devices are shown to exhibit promising NVM characteristics.

    Original languageEnglish
    Article number112110
    JournalApplied Physics Letters
    Issue number11
    Publication statusPublished - 2009


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