Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

Min Choul Kim; Sung Kim; Suk Ho Choi; Kidane Belay; Rob G. Elliman; Salvy P. Russo

doi:10.1109/LED.2009.2024440

Nonvolatile-Memory Characteristics of AlO^--Implanted AI₂O₃

Min Choul Kim^*, Sung Kim, Suk Ho Choi, Kidane Belay, Rob G. Elliman, Salvy P. Russo

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (SciVal)

Abstract

The nonvolatile-memory (NVM) characteristics of AIO^- -implanted Al₂O₃structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al₂O₃, and our calculations show that these levels are likely attributed to the defects in the Al₂O₃, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

Original language	English
Pages (from-to)	837-839
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	30
Issue number	8
DOIs	https://doi.org/10.1109/LED.2009.2024440
Publication status	Published - 2009

Access to Document

10.1109/LED.2009.2024440

Cite this

@article{9b415e26e9a647ae998eeb33069cc670,

title = "Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3",

abstract = "The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.",

keywords = "AlO, AlO ion implantation, Deep trap, Nonvolatile-memory (NVM)",

author = "Kim, \{Min Choul\} and Sung Kim and Choi, \{Suk Ho\} and Kidane Belay and Elliman, \{Rob G.\} and Russo, \{Salvy P.\}",

year = "2009",

doi = "10.1109/LED.2009.2024440",

language = "English",

volume = "30",

pages = "837--839",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Nonvolatile-Memory Characteristics of AlO--Implanted AI2O3

AU - Kim, Min Choul

AU - Kim, Sung

AU - Choi, Suk Ho

AU - Belay, Kidane

AU - Elliman, Rob G.

AU - Russo, Salvy P.

PY - 2009

Y1 - 2009

N2 - The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

AB - The nonvolatile-memory (NVM) characteristics of AIO- -implanted Al2O3structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al2O3, and our calculations show that these levels are likely attributed to the defects in the Al2O3, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.

KW - AlO

KW - AlO ion implantation

KW - Deep trap

KW - Nonvolatile-memory (NVM)

UR - https://www.scopus.com/pages/publications/68249151084

U2 - 10.1109/LED.2009.2024440

DO - 10.1109/LED.2009.2024440

M3 - Article

SN - 0741-3106

VL - 30

SP - 837

EP - 839

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 8

ER -

Nonvolatile-Memory Characteristics of AlO^--Implanted AI₂O₃

Abstract

Access to Document

Other files and links

Fingerprint

Cite this