Novel pulsed electron spin resonance system and studies of phosphorus in natural silicon

N. Suwuntanasarn; W. D. Hutchison; G. N. Milford; R. Bramley

doi:10.1007/s10751-008-9682-0

Novel pulsed electron spin resonance system and studies of phosphorus in natural silicon

N. Suwuntanasarn, W. D. Hutchison, G. N. Milford, R. Bramley

Research output: Contribution to journal › Article › peer-review

Abstract

An X-band pulsed electron spin resonance system has been designed and constructed specifically for studies of decoherence times of phosphorus donor electrons in silicon. The microwave electromagnetic field aspects of the structure have been analysed, and the probe head geometry optimised, through 3D electromagnetic simulations. Results for natural silicon samples at temperatures down to 6 K, are analysed and we obtain an estimate of the isolated spin decoherence time in ^natSi approximately an order of magnitude longer than previously measured.

Original language	English
Pages (from-to)	25-28
Number of pages	4
Journal	Hyperfine Interactions
Volume	180
Issue number	1-3
DOIs	https://doi.org/10.1007/s10751-008-9682-0
Publication status	Published - Nov 2007

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abstract = "An X-band pulsed electron spin resonance system has been designed and constructed specifically for studies of decoherence times of phosphorus donor electrons in silicon. The microwave electromagnetic field aspects of the structure have been analysed, and the probe head geometry optimised, through 3D electromagnetic simulations. Results for natural silicon samples at temperatures down to 6 K, are analysed and we obtain an estimate of the isolated spin decoherence time in natSi approximately an order of magnitude longer than previously measured.",

keywords = "Decoherence time, Electron spin echo, Phosphorus in silicon",

author = "N. Suwuntanasarn and Hutchison, {W. D.} and Milford, {G. N.} and R. Bramley",

year = "2007",

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AB - An X-band pulsed electron spin resonance system has been designed and constructed specifically for studies of decoherence times of phosphorus donor electrons in silicon. The microwave electromagnetic field aspects of the structure have been analysed, and the probe head geometry optimised, through 3D electromagnetic simulations. Results for natural silicon samples at temperatures down to 6 K, are analysed and we obtain an estimate of the isolated spin decoherence time in natSi approximately an order of magnitude longer than previously measured.

KW - Decoherence time

KW - Electron spin echo

KW - Phosphorus in silicon

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Novel pulsed electron spin resonance system and studies of phosphorus in natural silicon

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