Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Michael Nastasi; Tobias Höchbauer; Jung Kun Lee; Amit Misra; John P. Hirth; Mark Ridgway; Tamzin Lafford

doi:10.1063/1.1900309

Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Michael Nastasi^*, Tobias Höchbauer, Jung Kun Lee, Amit Misra, John P. Hirth, Mark Ridgway, Tamzin Lafford

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

93 Citations (Scopus)

Abstract

H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum.

Original language	English
Article number	154102
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	15
DOIs	https://doi.org/10.1063/1.1900309
Publication status	Published - 2005

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10.1063/1.1900309

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AU - Ridgway, Mark

AU - Lafford, Tamzin

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AB - H ion implantation into crystalline Si is known to result in the precipitation of planar defects in the form of platelets. Hydrogen-platelet formation is critical to the process that allows controlled cleavage of Si along the plane of the platelets and subsequent transfer and integration of thinly sliced Si with other substrates. Here we show that H-platelet formation is controlled by the depth of the radiation-induced damage and then develop a model that considers the influence of stress to correctly predict platelet orientation and the depth at which platelet nucleation density is a maximum.

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Nucleation and growth of platelets in hydrogen-ion-implanted silicon

Abstract

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