Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts

Zhongshu Yang; Josua Stuckelberger; Daniel Macdonald; AnYao Liu

doi:10.1109/PVSC48317.2022.10638249

Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts

Zhongshu Yang^*, Josua Stuckelberger, Daniel Macdonald, AnYao Liu^*

^*Corresponding author for this work

The Australian National University

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

Abstract

This paper presents 1D and 3D numerical simulations of the diffusion-limited gettering process for iron in silicon by the polysilicon/oxide passivating contact structures. Simulation results reveal that a 1D model is sufficient to simulate the gettering kinetics, as iron diffusion through the oxide interlayer can take place via both direct diffusion and diffusion through pinholes, where either of these two are mainly 1D. In addition, we provide a simple exponential approximation to describe the gettering kinetics, which can be used to extract the blocking effect of the oxide interlayer in the cases where the Fe transport factor in oxide is less than 1×10-5.

Original language	English
Title of host publication	2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1429-1434
Number of pages	6
ISBN (Electronic)	978-1-7281-6117-4
ISBN (Print)	978-1-7281-6118-1
DOIs	https://doi.org/10.1109/PVSC48317.2022.10638249
Publication status	Published - 2022
Event	49th IEEE Photovoltaics Specialists Conference, PVSC 2022 - Philadelphia, United States Duration: 5 Jun 2022 → 10 Jun 2022 Conference number: 49 https://ieee-pvsc.org/PVSC49/ https://ieeexplore.ieee.org/xpl/conhome/9938432/proceeding (Conference Proceedings)

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISSN (Print)	0160-8371

Conference

Conference	49th IEEE Photovoltaics Specialists Conference, PVSC 2022
Country/Territory	United States
City	Philadelphia
Period	5/06/22 → 10/06/22
Internet address	https://ieee-pvsc.org/PVSC49/ https://ieeexplore.ieee.org/xpl/conhome/9938432/proceeding (Conference Proceedings)

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10.1109/PVSC48317.2022.10638249

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Yang, Z., Stuckelberger, J., Macdonald, D., & Liu, A. (2022). Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts. In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA (pp. 1429-1434). (Conference Record of the IEEE Photovoltaic Specialists Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC48317.2022.10638249

Yang, Zhongshu ; Stuckelberger, Josua ; Macdonald, Daniel et al. / Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts. 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 1429-1434 (Conference Record of the IEEE Photovoltaic Specialists Conference).

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title = "Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts",

abstract = "This paper presents 1D and 3D numerical simulations of the diffusion-limited gettering process for iron in silicon by the polysilicon/oxide passivating contact structures. Simulation results reveal that a 1D model is sufficient to simulate the gettering kinetics, as iron diffusion through the oxide interlayer can take place via both direct diffusion and diffusion through pinholes, where either of these two are mainly 1D. In addition, we provide a simple exponential approximation to describe the gettering kinetics, which can be used to extract the blocking effect of the oxide interlayer in the cases where the Fe transport factor in oxide is less than 1×10-5.",

keywords = "gettering, polysilicon/oxide passivating contacts, silicon solar cells, simulation",

author = "Zhongshu Yang and Josua Stuckelberger and Daniel Macdonald and AnYao Liu",

note = "Publisher Copyright: {\textcopyright}2022 IEEE.; 49th IEEE Photovoltaics Specialists Conference, PVSC 2022 ; Conference date: 05-06-2022 Through 10-06-2022",

year = "2022",

doi = "10.1109/PVSC48317.2022.10638249",

language = "English",

isbn = "978-1-7281-6118-1",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1429--1434",

booktitle = "2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA",

address = "United States",

url = "https://ieee-pvsc.org/PVSC49/, https://ieeexplore.ieee.org/xpl/conhome/9938432/proceeding",

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Yang, Z, Stuckelberger, J, Macdonald, D & Liu, A 2022, Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts. in 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1429-1434, 49th IEEE Photovoltaics Specialists Conference, PVSC 2022, Philadelphia, Pennsylvania, United States, 5/06/22. https://doi.org/10.1109/PVSC48317.2022.10638249

Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts. / Yang, Zhongshu; Stuckelberger, Josua; Macdonald, Daniel et al.
2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA. Institute of Electrical and Electronics Engineers Inc., 2022. p. 1429-1434 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

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T1 - Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts

AU - Yang, Zhongshu

AU - Stuckelberger, Josua

AU - Macdonald, Daniel

AU - Liu, AnYao

N1 - Conference code: 49

PY - 2022

Y1 - 2022

N2 - This paper presents 1D and 3D numerical simulations of the diffusion-limited gettering process for iron in silicon by the polysilicon/oxide passivating contact structures. Simulation results reveal that a 1D model is sufficient to simulate the gettering kinetics, as iron diffusion through the oxide interlayer can take place via both direct diffusion and diffusion through pinholes, where either of these two are mainly 1D. In addition, we provide a simple exponential approximation to describe the gettering kinetics, which can be used to extract the blocking effect of the oxide interlayer in the cases where the Fe transport factor in oxide is less than 1×10-5.

AB - This paper presents 1D and 3D numerical simulations of the diffusion-limited gettering process for iron in silicon by the polysilicon/oxide passivating contact structures. Simulation results reveal that a 1D model is sufficient to simulate the gettering kinetics, as iron diffusion through the oxide interlayer can take place via both direct diffusion and diffusion through pinholes, where either of these two are mainly 1D. In addition, we provide a simple exponential approximation to describe the gettering kinetics, which can be used to extract the blocking effect of the oxide interlayer in the cases where the Fe transport factor in oxide is less than 1×10-5.

KW - gettering

KW - polysilicon/oxide passivating contacts

KW - silicon solar cells

KW - simulation

UR - https://www.scopus.com/pages/publications/85202837947

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DO - 10.1109/PVSC48317.2022.10638249

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AN - SCOPUS:85202837947

SN - 978-1-7281-6118-1

T3 - Conference Record of the IEEE Photovoltaic Specialists Conference

SP - 1429

EP - 1434

BT - 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 49th IEEE Photovoltaics Specialists Conference, PVSC 2022

Y2 - 5 June 2022 through 10 June 2022

ER -

Yang Z, Stuckelberger J, Macdonald D , Liu A. Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts. In 2022 IEEE 49th Photovoltaics Specialists Conference (PVSC), Philadelphia, PA, USA. Institute of Electrical and Electronics Engineers Inc. 2022. p. 1429-1434. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC48317.2022.10638249

Numerical simulation and simple approximation of the impurity gettering kinetics by polysilicon based passivating contacts

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