Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

V. A. Coleman; J. E. Bradby; C. Jagadish; M. R. Phillips

doi:10.1063/1.2338552

Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

V. A. Coleman^*, J. E. Bradby, C. Jagadish, M. R. Phillips

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm).

Original language	English
Article number	082102
Journal	Applied Physics Letters
Volume	89
Issue number	8
DOIs	https://doi.org/10.1063/1.2338552
Publication status	Published - 2006

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title = "Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO",

abstract = "The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [11{\=2}0] [2{\=1}{\=1}0], and [1{\=2}10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm).",

author = "Coleman, {V. A.} and Bradby, {J. E.} and C. Jagadish and Phillips, {M. R.}",

year = "2006",

doi = "10.1063/1.2338552",

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volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

AU - Coleman, V. A.

AU - Bradby, J. E.

AU - Jagadish, C.

AU - Phillips, M. R.

PY - 2006

Y1 - 2006

N2 - The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm).

AB - The influence of spherical nanoindentation on the band edge and deep level emission of single crystal c-axis ZnO has been studied by cathodoluminescence (CL) spectroscopy and monochromatic imaging. Excitonic emission is quenched at the indent site and defect emission in the range of 450-720 nm is enhanced. Analysis of CL monochromatic images and spectra suggests that at least two different defect states are responsible for the broad defect emission band. Additionally, the indents result in a strong crystallographic dependence of the defect emission, producing a rosette feature with [112̄0] [21̄1̄0], and [12̄10] orientations that reflect the star-shaped luminescence quenching observed at the excitonic peak (390 nm).

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DO - 10.1063/1.2338552

M3 - Article

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082102

ER -

Observation of enhanced defect emission and excitonic quenching from spherically indented ZnO

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