On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

Sangyoon Han; Dae Gon Kim; Joonhyuk Hwang; In Hwan Do; Dongin Jeong; Yong Hee Lee; Duk Yong Choi; Hansuek Lee

doi:10.1117/12.2544063

On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

Sangyoon Han, Dae Gon Kim, Joonhyuk Hwang, In Hwan Do, Dongin Jeong, Yong Hee Lee, Duk Yong Choi, Hansuek Lee^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x10⁷ which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled region.

Original language	English
Title of host publication	Laser Resonators, Microresonators, and Beam Control XXII
Editors	Alexis V. Kudryashov, Alan H. Paxton, Vladimir S. Ilchenko, Andrea M. Armani
Publisher	SPIE
ISBN (Electronic)	9781510632950
DOIs	https://doi.org/10.1117/12.2544063
Publication status	Published - 2020
Event	Laser Resonators, Microresonators, and Beam Control XXII 2020 - San Francisco, United States Duration: 3 Feb 2020 → 6 Feb 2020

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	11266
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Laser Resonators, Microresonators, and Beam Control XXII 2020
Country/Territory	United States
City	San Francisco
Period	3/02/20 → 6/02/20

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10.1117/12.2544063

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Han, S., Kim, D. G., Hwang, J., Do, I. H., Jeong, D., Lee, Y. H., Choi, D. Y., & Lee, H. (2020). On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process. In A. V. Kudryashov, A. H. Paxton, V. S. Ilchenko, & A. M. Armani (Eds.), Laser Resonators, Microresonators, and Beam Control XXII Article 112660P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11266). SPIE. https://doi.org/10.1117/12.2544063

Han, Sangyoon ; Kim, Dae Gon ; Hwang, Joonhyuk et al. / On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process. Laser Resonators, Microresonators, and Beam Control XXII. editor / Alexis V. Kudryashov ; Alan H. Paxton ; Vladimir S. Ilchenko ; Andrea M. Armani. SPIE, 2020. (Proceedings of SPIE - The International Society for Optical Engineering).

@inproceedings{2755cb156f15492797b207813d1f5363,

title = "On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process",

abstract = "We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x107 which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled region.",

keywords = "Brillouin laser, Chalcogenide, High-Q, Low-threshold, On-chip, Resonator",

author = "Sangyoon Han and Kim, {Dae Gon} and Joonhyuk Hwang and Do, {In Hwan} and Dongin Jeong and Lee, {Yong Hee} and Choi, {Duk Yong} and Hansuek Lee",

note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Laser Resonators, Microresonators, and Beam Control XXII 2020 ; Conference date: 03-02-2020 Through 06-02-2020",

year = "2020",

doi = "10.1117/12.2544063",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

editor = "Kudryashov, {Alexis V.} and Paxton, {Alan H.} and Ilchenko, {Vladimir S.} and Armani, {Andrea M.}",

booktitle = "Laser Resonators, Microresonators, and Beam Control XXII",

address = "United States",

}

Han, S, Kim, DG, Hwang, J, Do, IH, Jeong, D, Lee, YH, Choi, DY & Lee, H 2020, On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process. in AV Kudryashov, AH Paxton, VS Ilchenko & AM Armani (eds), Laser Resonators, Microresonators, and Beam Control XXII., 112660P, Proceedings of SPIE - The International Society for Optical Engineering, vol. 11266, SPIE, Laser Resonators, Microresonators, and Beam Control XXII 2020, San Francisco, United States, 3/02/20. https://doi.org/10.1117/12.2544063

On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process. / Han, Sangyoon; Kim, Dae Gon; Hwang, Joonhyuk et al.
Laser Resonators, Microresonators, and Beam Control XXII. ed. / Alexis V. Kudryashov; Alan H. Paxton; Vladimir S. Ilchenko; Andrea M. Armani. SPIE, 2020. 112660P (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 11266).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

AU - Han, Sangyoon

AU - Kim, Dae Gon

AU - Hwang, Joonhyuk

AU - Do, In Hwan

AU - Jeong, Dongin

AU - Lee, Yong Hee

AU - Choi, Duk Yong

AU - Lee, Hansuek

N1 - Publisher Copyright: © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.

PY - 2020

Y1 - 2020

N2 - We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x107 which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled region.

AB - We present a new device platform which defines on-chip chalcogenide waveguide/resonators without directly etching chalcogenide. Using our platform, we have demonstrated chalcogenide ring resonators with record high Q-factor exceeding 1.1x107 which is 10 times larger than previous record on on-chip chalcogenide resonators. A ring cavity is designed and fabricated for Stimulated Brillouin lasing on our platform. Thanks to the high-Q factor, Brillouin lasing with threshold power of 1 mW is demonstrated. This value is more than an order of magnitude improvement than previous world record for on-chip chalcogenide Brillouin lasers. We also developed an efficient and flexible method for resonator waveguide coupling with our device platform. Coupling between a resonator and a waveguide can be varied from under coupled region to over-coupled region.

KW - Brillouin laser

KW - Chalcogenide

KW - High-Q

KW - Low-threshold

KW - On-chip

KW - Resonator

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U2 - 10.1117/12.2544063

DO - 10.1117/12.2544063

M3 - Conference contribution

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Laser Resonators, Microresonators, and Beam Control XXII

A2 - Kudryashov, Alexis V.

A2 - Paxton, Alan H.

A2 - Ilchenko, Vladimir S.

A2 - Armani, Andrea M.

PB - SPIE

T2 - Laser Resonators, Microresonators, and Beam Control XXII 2020

Y2 - 3 February 2020 through 6 February 2020

ER -

Han S, Kim DG, Hwang J, Do IH, Jeong D, Lee YH et al. On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process. In Kudryashov AV, Paxton AH, Ilchenko VS, Armani AM, editors, Laser Resonators, Microresonators, and Beam Control XXII. SPIE. 2020. 112660P. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.2544063

On-chip Brillouin lasers based on 10 million-Q chalcogenide resonators without direct etch process

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