On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain

Zheng Zhang; Ruixue Liu; Wei Wang; Kunlun Yan; Zhen Yang; Maozhuang Song; Duanduan Wu; Peipeng Xu; Xunsi Wang; Rongping Wang

doi:10.1364/OL.499779

On-chip Er-doped Ta₂O₅ waveguide amplifiers with a high internal net gain

Zheng Zhang, Ruixue Liu, Wei Wang, Kunlun Yan, Zhen Yang, Maozhuang Song, Duanduan Wu, Peipeng Xu, Xunsi Wang, Rongping Wang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533nm was 2.5mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1mW at 980nm and signal input power of -30.0dBm (1 μW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.

Original language	English
Pages (from-to)	5799-5802
Number of pages	4
Journal	Optics Letters
Volume	48
Issue number	21
DOIs	https://doi.org/10.1364/OL.499779
Publication status	Published - 1 Nov 2023

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title = "On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain",

abstract = "We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533nm was 2.5mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1mW at 980nm and signal input power of -30.0dBm (1 μW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.",

author = "Zheng Zhang and Ruixue Liu and Wei Wang and Kunlun Yan and Zhen Yang and Maozhuang Song and Duanduan Wu and Peipeng Xu and Xunsi Wang and Rongping Wang",

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T1 - On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain

AU - Zhang, Zheng

AU - Liu, Ruixue

AU - Wang, Wei

AU - Yan, Kunlun

AU - Yang, Zhen

AU - Song, Maozhuang

AU - Wu, Duanduan

AU - Xu, Peipeng

AU - Wang, Xunsi

AU - Wang, Rongping

PY - 2023/11/1

Y1 - 2023/11/1

N2 - We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533nm was 2.5mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1mW at 980nm and signal input power of -30.0dBm (1 μW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.

AB - We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533nm was 2.5mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1mW at 980nm and signal input power of -30.0dBm (1 μW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.

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U2 - 10.1364/OL.499779

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JO - Optics Letters

JF - Optics Letters

IS - 21

ER -

On-chip Er-doped Ta₂O₅ waveguide amplifiers with a high internal net gain

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