On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain

Zheng Zhang, Ruixue Liu, Wei Wang, Kunlun Yan, Zhen Yang, Maozhuang Song, Duanduan Wu, Peipeng Xu, Xunsi Wang, Rongping Wang*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    1 Citation (Scopus)


    We designed and fabricated a double-layered structure Er3+:Ta2O5 waveguide and investigated its optical amplification performance in C band. The pump laser threshold for zero gain at 1533nm was 2.5mW, and the internal net gain was ∼4.63 dB/cm for a lunched pump power of 36.1mW at 980nm and signal input power of -30.0dBm (1 μW). The relationship between the internal gain and the signal input power was also investigated, and a large internal net gain of 10.58 dB/cm was achieved at a signal input power of ∼-47.1 dBm. The results confirm the potentials of the use of Ta2O5 as a host material for optical waveguide amplification.

    Original languageEnglish
    Pages (from-to)5799-5802
    Number of pages4
    JournalOptics Letters
    Issue number21
    Publication statusPublished - 1 Nov 2023


    Dive into the research topics of 'On-chip Er-doped Ta2O5 waveguide amplifiers with a high internal net gain'. Together they form a unique fingerprint.

    Cite this