On-chip supercontinuum spanning 4000 nm in silicon on sapphire

Darren D. Hudson; Neetesh Singh; Yi Yu; Christian Grillet; Andrew Read; Petar Atanackovic; Steven G. Duval; Stephen Madden; David J. Moss; Barry Luther-Davies; Benjamin J. Eggleton

doi:10.1109/PHOSST.2015.7248194

On-chip supercontinuum spanning 4000 nm in silicon on sapphire

Darren D. Hudson, Neetesh Singh, Yi Yu, Christian Grillet, Andrew Read, Petar Atanackovic, Steven G. Duval, Stephen Madden, David J. Moss, Barry Luther-Davies, Benjamin J. Eggleton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

Original language	English
Title of host publication	2015 IEEE Summer Topicals Meeting Series, SUM 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	63-64
Number of pages	2
ISBN (Electronic)	9781479974689
DOIs	https://doi.org/10.1109/PHOSST.2015.7248194
Publication status	Published - 9 Sept 2015
Event	IEEE Summer Topicals Meeting Series, SUM 2015 - Nassau, Bahamas Duration: 13 Jul 2015 → 15 Jul 2015

Publication series

Name	2015 IEEE Summer Topicals Meeting Series, SUM 2015

Conference

Conference	IEEE Summer Topicals Meeting Series, SUM 2015
Country/Territory	Bahamas
City	Nassau
Period	13/07/15 → 15/07/15

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10.1109/PHOSST.2015.7248194

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Hudson, D. D., Singh, N., Yu, Y., Grillet, C., Read, A., Atanackovic, P., Duval, S. G., Madden, S., Moss, D. J., Luther-Davies, B., & Eggleton, B. J. (2015). On-chip supercontinuum spanning 4000 nm in silicon on sapphire. In 2015 IEEE Summer Topicals Meeting Series, SUM 2015 (pp. 63-64). Article 7248194 (2015 IEEE Summer Topicals Meeting Series, SUM 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2015.7248194

@inproceedings{7a99e9c6bea045a58095822d9cb53c63,

title = "On-chip supercontinuum spanning 4000 nm in silicon on sapphire",

abstract = "We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.",

author = "Hudson, {Darren D.} and Neetesh Singh and Yi Yu and Christian Grillet and Andrew Read and Petar Atanackovic and Duval, {Steven G.} and Stephen Madden and Moss, {David J.} and Barry Luther-Davies and Eggleton, {Benjamin J.}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Summer Topicals Meeting Series, SUM 2015 ; Conference date: 13-07-2015 Through 15-07-2015",

year = "2015",

month = sep,

day = "9",

doi = "10.1109/PHOSST.2015.7248194",

language = "English",

series = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "63--64",

booktitle = "2015 IEEE Summer Topicals Meeting Series, SUM 2015",

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}

Hudson, DD, Singh, N, Yu, Y, Grillet, C, Read, A, Atanackovic, P, Duval, SG, Madden, S, Moss, DJ, Luther-Davies, B & Eggleton, BJ 2015, On-chip supercontinuum spanning 4000 nm in silicon on sapphire. in 2015 IEEE Summer Topicals Meeting Series, SUM 2015., 7248194, 2015 IEEE Summer Topicals Meeting Series, SUM 2015, Institute of Electrical and Electronics Engineers Inc., pp. 63-64, IEEE Summer Topicals Meeting Series, SUM 2015, Nassau, Bahamas, 13/07/15. https://doi.org/10.1109/PHOSST.2015.7248194

On-chip supercontinuum spanning 4000 nm in silicon on sapphire. / Hudson, Darren D.; Singh, Neetesh; Yu, Yi et al.
2015 IEEE Summer Topicals Meeting Series, SUM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 63-64 7248194 (2015 IEEE Summer Topicals Meeting Series, SUM 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - On-chip supercontinuum spanning 4000 nm in silicon on sapphire

AU - Hudson, Darren D.

AU - Singh, Neetesh

AU - Yu, Yi

AU - Grillet, Christian

AU - Read, Andrew

AU - Atanackovic, Petar

AU - Duval, Steven G.

AU - Madden, Stephen

AU - Moss, David J.

AU - Luther-Davies, Barry

AU - Eggleton, Benjamin J.

PY - 2015/9/9

Y1 - 2015/9/9

N2 - We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

AB - We demonstrate an octave spanning, 1.9-6.2 μm supercontinuum generation in a low loss silicon on a sapphire (SOS) nanowire. The supercontinuum is achieved by pumping in the low-loss window of SOS near 3.7 μm.

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U2 - 10.1109/PHOSST.2015.7248194

DO - 10.1109/PHOSST.2015.7248194

M3 - Conference contribution

T3 - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

SP - 63

EP - 64

BT - 2015 IEEE Summer Topicals Meeting Series, SUM 2015

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE Summer Topicals Meeting Series, SUM 2015

Y2 - 13 July 2015 through 15 July 2015

ER -

On-chip supercontinuum spanning 4000 nm in silicon on sapphire

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