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On Defects Created in 45 keV H--Implanted n-type Cz Si: a Fluence Dependence and Isochronal Annealing Study

  • Prakash Deenapanray

    Research output: Contribution to journal › Article › peer-review

    Original languageEnglish
    Pages (from-to)190-192
    JournalPhysica B
    Volume308-310
    Publication statusPublished - 2001

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