TY - JOUR
T1 - On quantifying the group-V to group-III interdiffusion rates in In xGa1-xAs/InP quantum wells
AU - Gareso, P. L.
AU - Buda, M.
AU - Tan, H. H.
AU - Jagadish, C.
AU - Ilyas, S.
AU - Gal, M.
PY - 2006/6/1
Y1 - 2006/6/1
N2 - The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation has been investigated using differential reflectance (DR), photoluminescence (PL) and theoretical modelling. Based on DR, PL and modelling results, we found the unique value of k (LV/LIII) ratio for three different InGaAs quantum well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS was 1.05, 1.25 and 1.40 respectively. These ratios were slightly higher than unity indicating that the diffusion coefficient of the group-V sublattice was larger than that of the diffusion coefficient of the group-III sublattice. Change in the interdiffusion rate of group V and group III in the lattice-matched and strained (TS, CS) quantum well structures was most likely due to the different strain profile developed in the quantum well region as a result of changing the quantum well composition.
AB - The interdiffusion rate of group-V and group-III sublattice atoms in InxGa1-xAs/InP quantum well structures induced by proton implantation has been investigated using differential reflectance (DR), photoluminescence (PL) and theoretical modelling. Based on DR, PL and modelling results, we found the unique value of k (LV/LIII) ratio for three different InGaAs quantum well structures, namely lattice matched (LM), tensile strained (TS) and compressively strained (CS). The k ratio of TS, LM and CS was 1.05, 1.25 and 1.40 respectively. These ratios were slightly higher than unity indicating that the diffusion coefficient of the group-V sublattice was larger than that of the diffusion coefficient of the group-III sublattice. Change in the interdiffusion rate of group V and group III in the lattice-matched and strained (TS, CS) quantum well structures was most likely due to the different strain profile developed in the quantum well region as a result of changing the quantum well composition.
UR - http://www.scopus.com/inward/record.url?scp=33646725710&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/21/6/022
DO - 10.1088/0268-1242/21/6/022
M3 - Article
SN - 0268-1242
VL - 21
SP - 829
EP - 832
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 6
ER -