TY - JOUR
T1 - On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions
AU - Deenapanray, Prakash N.K.
AU - Petravic, Mladen
PY - 1999/4/15
Y1 - 1999/4/15
N2 - Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth profiles were obtained for Ti, Zr, and Hf (metals with lower heat of oxide formation than Si) by bombarding at angles of incidence for which a stoichiometric surface oxide is formed. The effect of impurity diffusivity is demonstrated through SIMS measurements at elevated temperatures (∼350-380°C) for Cr, Zr, Ta, and Ti.
AB - Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth profiles were obtained for Ti, Zr, and Hf (metals with lower heat of oxide formation than Si) by bombarding at angles of incidence for which a stoichiometric surface oxide is formed. The effect of impurity diffusivity is demonstrated through SIMS measurements at elevated temperatures (∼350-380°C) for Cr, Zr, Ta, and Ti.
UR - http://www.scopus.com/inward/record.url?scp=0001765001&partnerID=8YFLogxK
U2 - 10.1063/1.370302
DO - 10.1063/1.370302
M3 - Article
SN - 0021-8979
VL - 85
SP - 3993
EP - 3996
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 8 I
ER -