On the nature of radiative recombination in GaAsN

B. Q. Sun; M. Gal; Q. Gao; H. H. Tan; C. Jagadish

doi:10.1063/1.1526913

On the nature of radiative recombination in GaAsN

B. Q. Sun^*, M. Gal, Q. Gao, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The nature of radiative recombination at low temperatures in GaAsN was studied. The radiative recombination in GaAsN was found to take place between localized electrons and delocalized holes. The results showed that the risetime of the photoluminescence signal was more than two order of magnitude shorter than the expected value.

Original language	English
Pages (from-to)	4368-4370
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	23
DOIs	https://doi.org/10.1063/1.1526913
Publication status	Published - 2 Dec 2002

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title = "On the nature of radiative recombination in GaAsN",

abstract = "The nature of radiative recombination at low temperatures in GaAsN was studied. The radiative recombination in GaAsN was found to take place between localized electrons and delocalized holes. The results showed that the risetime of the photoluminescence signal was more than two order of magnitude shorter than the expected value.",

author = "Sun, {B. Q.} and M. Gal and Q. Gao and Tan, {H. H.} and C. Jagadish",

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AU - Jagadish, C.

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AB - The nature of radiative recombination at low temperatures in GaAsN was studied. The radiative recombination in GaAsN was found to take place between localized electrons and delocalized holes. The results showed that the risetime of the photoluminescence signal was more than two order of magnitude shorter than the expected value.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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On the nature of radiative recombination in GaAsN

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