On the nitridation of silicon by low energy nitrogen bombardment

M. Petravić; J. S. Williams; M. Conway; P. N.K. Deenapanray

doi:10.1063/1.122151

On the nitridation of silicon by low energy nitrogen bombardment

M. Petravić^*, J. S. Williams, M. Conway, P. N.K. Deenapanray

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

Original language	English
Pages (from-to)	1287-1289
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122151
Publication status	Published - 1998

Access to Document

10.1063/1.122151

Cite this

@article{659db2db23de4f1b83e164912f203db0,

title = "On the nitridation of silicon by low energy nitrogen bombardment",

abstract = "High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.",

author = "M. Petravi{\'c} and Williams, {J. S.} and M. Conway and Deenapanray, {P. N.K.}",

year = "1998",

doi = "10.1063/1.122151",

language = "English",

volume = "73",

pages = "1287--1289",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - On the nitridation of silicon by low energy nitrogen bombardment

AU - Petravić, M.

AU - Williams, J. S.

AU - Conway, M.

AU - Deenapanray, P. N.K.

PY - 1998

Y1 - 1998

N2 - High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

AB - High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

UR - http://www.scopus.com/inward/record.url?scp=0000942809&partnerID=8YFLogxK

U2 - 10.1063/1.122151

DO - 10.1063/1.122151

M3 - Article

SN - 0003-6951

VL - 73

SP - 1287

EP - 1289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

On the nitridation of silicon by low energy nitrogen bombardment

Abstract

Access to Document

Other files and links

Fingerprint

Cite this