On the nitridation of silicon by low energy nitrogen bombardment

M. Petravić; J. S. Williams; M. Conway; P. N.K. Deenapanray

doi:10.1063/1.122151

On the nitridation of silicon by low energy nitrogen bombardment

M. Petravić^*
, J. S. Williams
, M. Conway
, P. N.K. Deenapanray

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

Original language	English
Pages (from-to)	1287-1289
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	9
DOIs	https://doi.org/10.1063/1.122151
Publication status	Published - 1998

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title = "On the nitridation of silicon by low energy nitrogen bombardment",

abstract = "High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.",

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journal = "Applied Physics Letters",

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AU - Petravić, M.

AU - Williams, J. S.

AU - Conway, M.

AU - Deenapanray, P. N.K.

PY - 1998

Y1 - 1998

N2 - High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

AB - High-resolution Rutherford backscattering and channeling has been used to study the formation of surface nitrides during room temperature bombardment of silicon with nitrogen in a secondary ion mass spectrometry system. Slightly N-rich silicon nitride is formed at angles of incidence (to the surface normal) <27°. Nitrogen buildup profile exhibits several intense oscillations before reaching a constant level. Implanted metals were found to show little tendency for segregation under nitrogen bombardment even when a silicon nitride layer forms at the surface.

UR - https://www.scopus.com/pages/publications/0000942809

U2 - 10.1063/1.122151

DO - 10.1063/1.122151

M3 - Article

SN - 0003-6951

VL - 73

SP - 1287

EP - 1289

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

On the nitridation of silicon by low energy nitrogen bombardment

Abstract

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