On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment

Prakash N.K. Deenapanray; Mladen Petravic

doi:10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B

On the segregation of Ca at SiO₂/Si interface during oxygen ion bombardment

Prakash N.K. Deenapanray, Mladen Petravic

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO₂/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO₂ layer. We explain the migration behaviour of Ca in thermodynamic terms whereby segregation is driven by a large difference in solid solubilities of Ca in a-Si and SiO₂. The influence of temperature on the segregation at the SiO₂/a-Si interface is demonstrated. Evidence is also provided for the electric-field-induced migration of Ca. The discrepancy with previously reported results on the migration behaviour of Ca is discussed.

Original language	English
Pages (from-to)	160-167
Number of pages	8
Journal	Surface and Interface Analysis
Volume	29
Issue number	2
DOIs	https://doi.org/10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B
Publication status	Published - 2000

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10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B

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title = "On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment",

abstract = "Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO2/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO2 layer. We explain the migration behaviour of Ca in thermodynamic terms whereby segregation is driven by a large difference in solid solubilities of Ca in a-Si and SiO2. The influence of temperature on the segregation at the SiO2/a-Si interface is demonstrated. Evidence is also provided for the electric-field-induced migration of Ca. The discrepancy with previously reported results on the migration behaviour of Ca is discussed.",

author = "Deenapanray, \{Prakash N.K.\} and Mladen Petravic",

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TY - JOUR

T1 - On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment

AU - Deenapanray, Prakash N.K.

AU - Petravic, Mladen

PY - 2000

Y1 - 2000

N2 - Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO2/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO2 layer. We explain the migration behaviour of Ca in thermodynamic terms whereby segregation is driven by a large difference in solid solubilities of Ca in a-Si and SiO2. The influence of temperature on the segregation at the SiO2/a-Si interface is demonstrated. Evidence is also provided for the electric-field-induced migration of Ca. The discrepancy with previously reported results on the migration behaviour of Ca is discussed.

AB - Segregation of Ca in Si has been studied using SIMS and RBS. Pronounced Ca profile broadening is observed during SIMS measurements with oxygen ions under bombardment conditions, yielding the formation of a stoichiometric oxide layer at the surface. Additional profiling through the SiO2/Si interface showed that Ca segregates predominantly at the Si side of the interface, within an a-Si layer adjacent to the continuous SiO2 layer. We explain the migration behaviour of Ca in thermodynamic terms whereby segregation is driven by a large difference in solid solubilities of Ca in a-Si and SiO2. The influence of temperature on the segregation at the SiO2/a-Si interface is demonstrated. Evidence is also provided for the electric-field-induced migration of Ca. The discrepancy with previously reported results on the migration behaviour of Ca is discussed.

UR - https://www.scopus.com/pages/publications/0033908584

U2 - 10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B

DO - 10.1002/(SICI)1096-9918(200002)29:2<160::AID-SIA723>3.0.CO;2-B

M3 - Article

SN - 0142-2421

VL - 29

SP - 160

EP - 167

JO - Surface and Interface Analysis

JF - Surface and Interface Analysis

IS - 2

ER -

On the segregation of Ca at SiO₂/Si interface during oxygen ion bombardment

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