On the segregation of metals during low-energy oxygen bombardment of silicon

Mladen Petravić

doi:10.1016/S0169-4332(98)00274-8

On the segregation of metals during low-energy oxygen bombardment of silicon

Mladen Petravić^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO ₂ layer and the 'antisegregation' behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher.

Original language	English
Pages (from-to)	200-204
Number of pages	5
Journal	Applied Surface Science
Volume	135
Issue number	1-4
DOIs	https://doi.org/10.1016/S0169-4332(98)00274-8
Publication status	Published - Sept 1998

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title = "On the segregation of metals during low-energy oxygen bombardment of silicon",

abstract = " Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO 2 layer and the 'antisegregation' behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher.",

keywords = "Compound formation, Metal oxides, Secondary ion mass spectroscopy, Silicon oxides, Surface segregation",

author = "Mladen Petravi{\'c}",

year = "1998",

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language = "English",

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journal = "Applied Surface Science",

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AU - Petravić, Mladen

PY - 1998/9

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N2 - Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO 2 layer and the 'antisegregation' behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher.

AB - Segregation of metal impurities in Si under oxygen ion bombardment has been studied using secondary ion mass spectrometry. A strong evidence has been found for the thermodynamic driving force for segregation. This includes segregation of metal atoms at both interfaces of a buried SiO 2 layer and the 'antisegregation' behaviour of metal atoms having lower heats of oxide formation than Si. Segregation is enhanced at elevated temperatures when the metal diffusivity in amorphous Si is higher.

KW - Compound formation

KW - Metal oxides

KW - Secondary ion mass spectroscopy

KW - Silicon oxides

KW - Surface segregation

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U2 - 10.1016/S0169-4332(98)00274-8

DO - 10.1016/S0169-4332(98)00274-8

M3 - Article

SN - 0169-4332

VL - 135

SP - 200

EP - 204

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

On the segregation of metals during low-energy oxygen bombardment of silicon

Abstract

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