Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

Daniel Macdonald; Prakash N.K. Deenapanray; Stephan Diez

doi:10.1063/1.1789630

Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

Daniel Macdonald^*, Prakash N.K. Deenapanray, Stephan Diez

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

The impact of residual centers on self-ion implanted and annealed crystalline silicon was studied. The nature of the recombination centers that cause the residual recombination was also discussed. The deep level transient spectroscopy revealed a decrease in the vacancy-related defect concentration in the high-dose samples. The results indicate that silicon interstitials, arising from the slowly dissolving dislocation loops, may be responsible for the increased recombination deep within the samples.

Original language	English
Pages (from-to)	3687-3691
Number of pages	5
Journal	Journal of Applied Physics
Volume	96
Issue number	7
DOIs	https://doi.org/10.1063/1.1789630
Publication status	Published - 1 Oct 2004

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title = "Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon",

abstract = "The impact of residual centers on self-ion implanted and annealed crystalline silicon was studied. The nature of the recombination centers that cause the residual recombination was also discussed. The deep level transient spectroscopy revealed a decrease in the vacancy-related defect concentration in the high-dose samples. The results indicate that silicon interstitials, arising from the slowly dissolving dislocation loops, may be responsible for the increased recombination deep within the samples.",

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N2 - The impact of residual centers on self-ion implanted and annealed crystalline silicon was studied. The nature of the recombination centers that cause the residual recombination was also discussed. The deep level transient spectroscopy revealed a decrease in the vacancy-related defect concentration in the high-dose samples. The results indicate that silicon interstitials, arising from the slowly dissolving dislocation loops, may be responsible for the increased recombination deep within the samples.

AB - The impact of residual centers on self-ion implanted and annealed crystalline silicon was studied. The nature of the recombination centers that cause the residual recombination was also discussed. The deep level transient spectroscopy revealed a decrease in the vacancy-related defect concentration in the high-dose samples. The results indicate that silicon interstitials, arising from the slowly dissolving dislocation loops, may be responsible for the increased recombination deep within the samples.

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Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

Abstract

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