Optical nonlinearity of oxygen-rich SiOx thin films

W. T. Li*, R. Boswell, M. Samoc, A. Samoc, Q. H. Qin

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    5 Citations (Scopus)

    Abstract

    Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.

    Original languageEnglish
    Pages (from-to)235-237
    Number of pages3
    JournalElectronics Letters
    Volume43
    Issue number4
    DOIs
    Publication statusPublished - 2007

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