Abstract
Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.
Original language | English |
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Pages (from-to) | 235-237 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 43 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2007 |