Optical nonlinearity of oxygen-rich SiOx thin films

W. T. Li; R. Boswell; M. Samoc; A. Samoc; Q. H. Qin

doi:10.1049/el:20073668

Optical nonlinearity of oxygen-rich SiO_x thin films

W. T. Li^*, R. Boswell, M. Samoc, A. Samoc, Q. H. Qin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Highly oxygen-rich SiO_x thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO₂ films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.

Original language	English
Pages (from-to)	235-237
Number of pages	3
Journal	Electronics Letters
Volume	43
Issue number	4
DOIs	https://doi.org/10.1049/el:20073668
Publication status	Published - 2007

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@article{09c92df5bd3c46a19243d864e04cc38f,

title = "Optical nonlinearity of oxygen-rich SiOx thin films",

abstract = "Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.",

author = "Li, \{W. T.\} and R. Boswell and M. Samoc and A. Samoc and Qin, \{Q. H.\}",

year = "2007",

doi = "10.1049/el:20073668",

language = "English",

volume = "43",

pages = "235--237",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - Optical nonlinearity of oxygen-rich SiOx thin films

AU - Li, W. T.

AU - Boswell, R.

AU - Samoc, M.

AU - Samoc, A.

AU - Qin, Q. H.

PY - 2007

Y1 - 2007

N2 - Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.

AB - Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.

UR - https://www.scopus.com/pages/publications/33847154602

U2 - 10.1049/el:20073668

DO - 10.1049/el:20073668

M3 - Article

SN - 0013-5194

VL - 43

SP - 235

EP - 237

JO - Electronics Letters

JF - Electronics Letters

IS - 4

ER -

Optical nonlinearity of oxygen-rich SiO_x thin films

Abstract

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