Optical properties of erbium-implanted porous silicon microcavities

P. J. Reece; M. Gal; H. H. Tan; C. Jagadish

doi:10.1063/1.1808235

Optical properties of erbium-implanted porous silicon microcavities

P. J. Reece^*, M. Gal, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an accompanying cavity enhancement factor of 25. In addition, power- and temperature-dependent photoluminescence measurements indicate that erbium-implanted porous silicon has excitation mechanism very similar to that of erbium in a crystalline silicon host.

Original language	English
Pages (from-to)	3363-3365
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	16
DOIs	https://doi.org/10.1063/1.1808235
Publication status	Published - 18 Oct 2004

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abstract = "We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an accompanying cavity enhancement factor of 25. In addition, power- and temperature-dependent photoluminescence measurements indicate that erbium-implanted porous silicon has excitation mechanism very similar to that of erbium in a crystalline silicon host.",

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AU - Jagadish, C.

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AB - We have used ion implantation for erbium doping of mesoporous silicon microcavities. Optically active erbium-doped microcavities with Q factors in excess of 1500 have been demonstrated. We observed strong modification of the emission properties of the erbium in the microcavity with an accompanying cavity enhancement factor of 25. In addition, power- and temperature-dependent photoluminescence measurements indicate that erbium-implanted porous silicon has excitation mechanism very similar to that of erbium in a crystalline silicon host.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Optical properties of erbium-implanted porous silicon microcavities

Abstract

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