Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

Tianfeng Li; Yonghai Chen; Wen Lei; Xiaolong Zhou; Zhanguo Wang

doi:10.1016/j.physe.2010.11.010

Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

Tianfeng Li, Yonghai Chen^*, Wen Lei, Xiaolong Zhou, Zhanguo Wang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

This paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the InAsSb/In_0.53Ga_0.47As _0.7Sb_0.3 nanostructures with type-II band alignment have a much larger thermal activation energy (163 meV) compared with that of type-I band alignment (79 meV), which is helpful for suppressing the quenching of emission efficiency at high temperatures.

Original language	English
Pages (from-to)	869-873
Number of pages	5
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	43
Issue number	4
DOIs	https://doi.org/10.1016/j.physe.2010.11.010
Publication status	Published - Feb 2011

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10.1016/j.physe.2010.11.010

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title = "Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer",

abstract = "This paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the InAsSb/In0.53Ga0.47As 0.7Sb0.3 nanostructures with type-II band alignment have a much larger thermal activation energy (163 meV) compared with that of type-I band alignment (79 meV), which is helpful for suppressing the quenching of emission efficiency at high temperatures.",

author = "Tianfeng Li and Yonghai Chen and Wen Lei and Xiaolong Zhou and Zhanguo Wang",

year = "2011",

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doi = "10.1016/j.physe.2010.11.010",

language = "English",

volume = "43",

pages = "869--873",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "4",

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TY - JOUR

T1 - Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

AU - Li, Tianfeng

AU - Chen, Yonghai

AU - Lei, Wen

AU - Zhou, Xiaolong

AU - Wang, Zhanguo

PY - 2011/2

Y1 - 2011/2

N2 - This paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the InAsSb/In0.53Ga0.47As 0.7Sb0.3 nanostructures with type-II band alignment have a much larger thermal activation energy (163 meV) compared with that of type-I band alignment (79 meV), which is helpful for suppressing the quenching of emission efficiency at high temperatures.

AB - This paper presents a comparative study on the optical properties of both type-I and type-II InAsSb/InGaAsSb nanostructures on InP substrates. A type-I band alignment is observed for InAsSb/InGaAsSb heterostructure when the Sb composition in InGaAsSb layers is 10%, while a type-II band alignment is observed for the InAsSb/InGaAsSb heterostructures when the Sb composition in InGaAsSb layers is higher than 10%. And, besides their long emission wavelength (around 2 μm), the InAsSb/In0.53Ga0.47As 0.7Sb0.3 nanostructures with type-II band alignment have a much larger thermal activation energy (163 meV) compared with that of type-I band alignment (79 meV), which is helpful for suppressing the quenching of emission efficiency at high temperatures.

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U2 - 10.1016/j.physe.2010.11.010

DO - 10.1016/j.physe.2010.11.010

M3 - Article

SN - 1386-9477

VL - 43

SP - 869

EP - 873

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 4

ER -

Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer

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