Optically excited electron emission from silicon field emitter arrays

K. X. Liu; J. Campbell; J. P. Heritage

doi:10.1109/cleo.2000.907105

Optically excited electron emission from silicon field emitter arrays

K. X. Liu^*, J. Campbell, J. P. Heritage

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

The process of field emission arises when the electron tunneling probability to the vacuum increases as the vacuum barrier width decreases. Metallic and semiconductor tips have been studied for potential applications in flat panel displays and as cold CW cathodes for microwave vacuum electronics. The measurements of efficient CW photo-induced emission from silicon tip arrays as well as its saturation behavior and nanosecond scale temporal response has been discussed.

Original language	English
Pages	352-353
Number of pages	2
DOIs	https://doi.org/10.1109/cleo.2000.907105
Publication status	Published - 2000
Externally published	Yes
Event	Conference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA Duration: 7 May 2000 → 12 May 2000

Conference

Conference	Conference on Lasers and Electro-Optics (CLEO 2000)
City	San Francisco, CA, USA
Period	7/05/00 → 12/05/00

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10.1109/cleo.2000.907105

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title = "Optically excited electron emission from silicon field emitter arrays",

abstract = "The process of field emission arises when the electron tunneling probability to the vacuum increases as the vacuum barrier width decreases. Metallic and semiconductor tips have been studied for potential applications in flat panel displays and as cold CW cathodes for microwave vacuum electronics. The measurements of efficient CW photo-induced emission from silicon tip arrays as well as its saturation behavior and nanosecond scale temporal response has been discussed.",

author = "Liu, \{K. X.\} and J. Campbell and Heritage, \{J. P.\}",

year = "2000",

doi = "10.1109/cleo.2000.907105",

language = "English",

pages = "352--353",

note = "Conference on Lasers and Electro-Optics (CLEO 2000) ; Conference date: 07-05-2000 Through 12-05-2000",

}

TY - CONF

T1 - Optically excited electron emission from silicon field emitter arrays

AU - Liu, K. X.

AU - Campbell, J.

AU - Heritage, J. P.

PY - 2000

Y1 - 2000

N2 - The process of field emission arises when the electron tunneling probability to the vacuum increases as the vacuum barrier width decreases. Metallic and semiconductor tips have been studied for potential applications in flat panel displays and as cold CW cathodes for microwave vacuum electronics. The measurements of efficient CW photo-induced emission from silicon tip arrays as well as its saturation behavior and nanosecond scale temporal response has been discussed.

AB - The process of field emission arises when the electron tunneling probability to the vacuum increases as the vacuum barrier width decreases. Metallic and semiconductor tips have been studied for potential applications in flat panel displays and as cold CW cathodes for microwave vacuum electronics. The measurements of efficient CW photo-induced emission from silicon tip arrays as well as its saturation behavior and nanosecond scale temporal response has been discussed.

UR - https://www.scopus.com/pages/publications/0034540652

U2 - 10.1109/cleo.2000.907105

DO - 10.1109/cleo.2000.907105

M3 - Paper

AN - SCOPUS:0034540652

SP - 352

EP - 353

T2 - Conference on Lasers and Electro-Optics (CLEO 2000)

Y2 - 7 May 2000 through 12 May 2000

ER -

Optically excited electron emission from silicon field emitter arrays

Abstract

Conference

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