Optoelectronic properties of GaAs nanowire photodetector

H. Wang; P. Parkinson; J. Tian; D. Saxena; S. Mokkapati; Q. Gao; P. Prasai; L. Fu; F. Karouta; H. H. Tan; C. Jagadish

doi:10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector

H. Wang^*, P. Parkinson, J. Tian, D. Saxena, S. Mokkapati, Q. Gao, P. Prasai, L. Fu, F. Karouta, H. H. Tan, C. Jagadish

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

1 Citation (Scopus)

Abstract

A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	139-140
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2012.6472399
Publication status	Published - 2012
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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Wang, H., Parkinson, P., Tian, J., Saxena, D., Mokkapati, S., Gao, Q., Prasai, P., Fu, L., Karouta, F., Tan, H. H., & Jagadish, C. (2012). Optoelectronic properties of GaAs nanowire photodetector. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 139-140). Article 6472399 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472399

@inproceedings{9793c8ae028b4667825c772caf961e00,

title = "Optoelectronic properties of GaAs nanowire photodetector",

abstract = "A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.",

author = "H. Wang and P. Parkinson and J. Tian and D. Saxena and S. Mokkapati and Q. Gao and P. Prasai and L. Fu and F. Karouta and Tan, \{H. H.\} and C. Jagadish",

year = "2012",

doi = "10.1109/COMMAD.2012.6472399",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "139--140",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Wang, H, Parkinson, P, Tian, J, Saxena, D, Mokkapati, S, Gao, Q, Prasai, P, Fu, L, Karouta, F, Tan, HH & Jagadish, C 2012, Optoelectronic properties of GaAs nanowire photodetector. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472399, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 139-140, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector. / Wang, H.; Parkinson, P.; Tian, J. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 139-140 6472399 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper › peer-review

TY - GEN

T1 - Optoelectronic properties of GaAs nanowire photodetector

AU - Wang, H.

AU - Parkinson, P.

AU - Tian, J.

AU - Saxena, D.

AU - Mokkapati, S.

AU - Gao, Q.

AU - Prasai, P.

AU - Fu, L.

AU - Karouta, F.

AU - Tan, H. H.

AU - Jagadish, C.

PY - 2012

Y1 - 2012

N2 - A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

AB - A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.

UR - https://www.scopus.com/pages/publications/84875633308

U2 - 10.1109/COMMAD.2012.6472399

DO - 10.1109/COMMAD.2012.6472399

M3 - Conference Paper

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 139

EP - 140

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Wang H, Parkinson P, Tian J, Saxena D, Mokkapati S, Gao Q et al. Optoelectronic properties of GaAs nanowire photodetector. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 139-140. 6472399. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472399

Optoelectronic properties of GaAs nanowire photodetector

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