Ordering of Ge islands on Si(001) substrates patterned by nanoindentation

L. Persichetti*, A. Capasso, S. Ruffell, A. Sgarlata, M. Fanfoni, N. Motta, A. Balzarotti

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    Spatial organization of Ge islands, grown by physical vapor deposition, on prepatterned Si(001) substrates has been investigated. The substrates were patterned prior to Ge deposition by nanoindentation. Characterization of Ge dots is performed by atomic force microscopy and scanning electron microscopy. The nanoindents act as trapping sites, allowing ripening of Ge islands at those locations during subsequent deposition and diffusion of Ge on the surface. The results show that island ordering is intrinsically linked to the nucleation and growth at indented sites and it strongly depends on pattern parameters.

    Original languageEnglish
    Pages (from-to)4207-4211
    Number of pages5
    JournalThin Solid Films
    Volume519
    Issue number13
    DOIs
    Publication statusPublished - 29 Apr 2011

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