Orientation dependent ion beam mixing of Ta/Si interfaces

W. Berky; S. Gottschalk; R. G. Elliman; A. G. Balogh

doi:10.1016/j.nimb.2006.03.114

Orientation dependent ion beam mixing of Ta/Si interfaces

W. Berky, S. Gottschalk, R. G. Elliman, A. G. Balogh^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backscattering spectroscopy (RBS) was used to examine mixing effects. Atomic force microscopy (AFM) was applied for investigating the surface roughness. Ballistic mixing, radiation enhanced diffusion and thermal spike effects were found in both systems. Si substrates of the orientation (1 0 0) led to smaller mixing rates at the Ta/Si interface as compared to Si(1 1 1).

Original language	English
Pages (from-to)	200-203
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	249
Issue number	1-2 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.nimb.2006.03.114
Publication status	Published - Aug 2006

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@article{58d882a8fd5b4c4eae82447cd0263e50,

title = "Orientation dependent ion beam mixing of Ta/Si interfaces",

abstract = "Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backscattering spectroscopy (RBS) was used to examine mixing effects. Atomic force microscopy (AFM) was applied for investigating the surface roughness. Ballistic mixing, radiation enhanced diffusion and thermal spike effects were found in both systems. Si substrates of the orientation (1 0 0) led to smaller mixing rates at the Ta/Si interface as compared to Si(1 1 1).",

keywords = "Ion beam mixing, Molecular beam epitaxy, Radiation enhanced diffusion, Rutherford backscatering spectroscopy, Thin films",

author = "W. Berky and S. Gottschalk and Elliman, {R. G.} and Balogh, {A. G.}",

year = "2006",

month = aug,

doi = "10.1016/j.nimb.2006.03.114",

language = "English",

volume = "249",

pages = "200--203",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-2 SPEC. ISS.",

}

TY - JOUR

T1 - Orientation dependent ion beam mixing of Ta/Si interfaces

AU - Berky, W.

AU - Gottschalk, S.

AU - Elliman, R. G.

AU - Balogh, A. G.

PY - 2006/8

Y1 - 2006/8

N2 - Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backscattering spectroscopy (RBS) was used to examine mixing effects. Atomic force microscopy (AFM) was applied for investigating the surface roughness. Ballistic mixing, radiation enhanced diffusion and thermal spike effects were found in both systems. Si substrates of the orientation (1 0 0) led to smaller mixing rates at the Ta/Si interface as compared to Si(1 1 1).

AB - Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV Ar, 90 keV O and 90 keV C. Rutherford backscattering spectroscopy (RBS) was used to examine mixing effects. Atomic force microscopy (AFM) was applied for investigating the surface roughness. Ballistic mixing, radiation enhanced diffusion and thermal spike effects were found in both systems. Si substrates of the orientation (1 0 0) led to smaller mixing rates at the Ta/Si interface as compared to Si(1 1 1).

KW - Ion beam mixing

KW - Molecular beam epitaxy

KW - Radiation enhanced diffusion

KW - Rutherford backscatering spectroscopy

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=33745950862&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2006.03.114

DO - 10.1016/j.nimb.2006.03.114

M3 - Article

SN - 0168-583X

VL - 249

SP - 200

EP - 203

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-2 SPEC. ISS.

ER -

Orientation dependent ion beam mixing of Ta/Si interfaces

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