Origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures

A. M. Burke^*, D. E.J. Waddington, D. J. Carrad, R. W. Lyttleton, H. H. Tan, P. J. Reece, O. Klochan, A. R. Hamilton, A. Rai, D. Reuter, A. D. Wieck, A. P. Micolich

^*Corresponding author for this work

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