Origin of luminescence from Si--implanted (11̄02) Al 2O3

C. J. Park; Y. H. Kwon; Y. H. Lee; T. W. Kang; H. Y. Cho; Sung Kim; Suk Ho Choi; R. G. Elliman

doi:10.1063/1.1699471

Origin of luminescence from Si^--implanted (11̄02) Al ₂O₃

C. J. Park, Y. H. Kwon, Y. H. Lee, T. W. Kang, H. Y. Cho, Sung Kim, Suk Ho Choi^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The structural and luminescence properties of nc-Si in (11̄02) sapphires were analyzed using cathodoluminescence (CL), photoluminescence (PL), and transmission electron microscopy (TEM). Si crystallite of about 4 to 5 nm diameter were created by implantation with 30-keV Si ions and sunsequent annealing at 1100 °C with extended defects. The anealing temperature and the implant dose strongly affected the luminescence properties of the samples which were compared to O^-- and Al^--implanted Al ₂O₃. All the other bands were found to be defect related, with the exception of CL band, that was nanocrystal related.

Original language	English
Pages (from-to)	2667-2669
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1699471
Publication status	Published - 5 Apr 2004

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title = "Origin of luminescence from Si--implanted (1{\=1}02) Al 2O3",

abstract = "The structural and luminescence properties of nc-Si in (1{\=1}02) sapphires were analyzed using cathodoluminescence (CL), photoluminescence (PL), and transmission electron microscopy (TEM). Si crystallite of about 4 to 5 nm diameter were created by implantation with 30-keV Si ions and sunsequent annealing at 1100 °C with extended defects. The anealing temperature and the implant dose strongly affected the luminescence properties of the samples which were compared to O-- and Al--implanted Al 2O3. All the other bands were found to be defect related, with the exception of CL band, that was nanocrystal related.",

author = "Park, {C. J.} and Kwon, {Y. H.} and Lee, {Y. H.} and Kang, {T. W.} and Cho, {H. Y.} and Sung Kim and Choi, {Suk Ho} and Elliman, {R. G.}",

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volume = "84",

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journal = "Applied Physics Letters",

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T1 - Origin of luminescence from Si--implanted (11̄02) Al 2O3

AU - Park, C. J.

AU - Kwon, Y. H.

AU - Lee, Y. H.

AU - Kang, T. W.

AU - Cho, H. Y.

AU - Kim, Sung

AU - Choi, Suk Ho

AU - Elliman, R. G.

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The structural and luminescence properties of nc-Si in (11̄02) sapphires were analyzed using cathodoluminescence (CL), photoluminescence (PL), and transmission electron microscopy (TEM). Si crystallite of about 4 to 5 nm diameter were created by implantation with 30-keV Si ions and sunsequent annealing at 1100 °C with extended defects. The anealing temperature and the implant dose strongly affected the luminescence properties of the samples which were compared to O-- and Al--implanted Al 2O3. All the other bands were found to be defect related, with the exception of CL band, that was nanocrystal related.

AB - The structural and luminescence properties of nc-Si in (11̄02) sapphires were analyzed using cathodoluminescence (CL), photoluminescence (PL), and transmission electron microscopy (TEM). Si crystallite of about 4 to 5 nm diameter were created by implantation with 30-keV Si ions and sunsequent annealing at 1100 °C with extended defects. The anealing temperature and the implant dose strongly affected the luminescence properties of the samples which were compared to O-- and Al--implanted Al 2O3. All the other bands were found to be defect related, with the exception of CL band, that was nanocrystal related.

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U2 - 10.1063/1.1699471

DO - 10.1063/1.1699471

M3 - Article

SN - 0003-6951

VL - 84

SP - 2667

EP - 2669

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Origin of luminescence from Si^--implanted (11̄02) Al ₂O₃

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