TY - JOUR
T1 - Origin of mechanoluminescence from Mn-activated ZnAl2O 4
T2 - Triboelectricity-induced electroluminescence
AU - Matsui, Hiroaki
AU - Xu, Chao Nan
AU - Liu, Yun
AU - Tateyama, Hiroshi
PY - 2004/6
Y1 - 2004/6
N2 - Luminescence induced by friction, mechanoluminescence (ML) has been observed for ZnAl2O4: Mn2+ (ZAO:Mn) fabricated by systematically controlling the reducing temperature. The reducing treatment produced lattice defects under a reducing atmosphere. Those defects were associated with Zn and O vacancies through evaporation of ZnO in ZnAl 2O4, which was trapped with a large amount of carrier in the spinel. Results of dependence of ML intensity and integrated intensity for thermoluminescence on the reducing temperature showed that the trapped carrier plays an important role in producing the ML for ZAO:Mn. In addition, the ML for ZAO:Mn was strongly dependent upon the friction rod material; it was closely related to the surface voltage generated in the vicinity of the frictional surface. These results suggest that the ML for ZAO:Mn was caused by the effect of triboelectrification, but not piezoelectricity because ZnAl2O 4 has a centrosymmetric structure (Fd3m). Therefore, the carrier that is trapped in the spinel can be excited by the local electric field derived from friction between the two dissimilar materials, where the excited carrier is accelerated toward the luminescent center of the Mn2+ ions. Consequently, the Mn2+ ions are excited and release an emission band on the transition from 4T1 to 6A1. Evidence for these physical processes was corroborated from the finding that reduced ZAO:Mn showed highly efficient electroluminescence (EL). Therefore, it is inferred that the ML for ZAO:Mn is caused by triboelectricity-induced EL.
AB - Luminescence induced by friction, mechanoluminescence (ML) has been observed for ZnAl2O4: Mn2+ (ZAO:Mn) fabricated by systematically controlling the reducing temperature. The reducing treatment produced lattice defects under a reducing atmosphere. Those defects were associated with Zn and O vacancies through evaporation of ZnO in ZnAl 2O4, which was trapped with a large amount of carrier in the spinel. Results of dependence of ML intensity and integrated intensity for thermoluminescence on the reducing temperature showed that the trapped carrier plays an important role in producing the ML for ZAO:Mn. In addition, the ML for ZAO:Mn was strongly dependent upon the friction rod material; it was closely related to the surface voltage generated in the vicinity of the frictional surface. These results suggest that the ML for ZAO:Mn was caused by the effect of triboelectrification, but not piezoelectricity because ZnAl2O 4 has a centrosymmetric structure (Fd3m). Therefore, the carrier that is trapped in the spinel can be excited by the local electric field derived from friction between the two dissimilar materials, where the excited carrier is accelerated toward the luminescent center of the Mn2+ ions. Consequently, the Mn2+ ions are excited and release an emission band on the transition from 4T1 to 6A1. Evidence for these physical processes was corroborated from the finding that reduced ZAO:Mn showed highly efficient electroluminescence (EL). Therefore, it is inferred that the ML for ZAO:Mn is caused by triboelectricity-induced EL.
UR - http://www.scopus.com/inward/record.url?scp=42749101465&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.69.235109
DO - 10.1103/PhysRevB.69.235109
M3 - Article
SN - 0163-1829
VL - 69
SP - 235109-1-235109-7
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 23
M1 - 235109
ER -