Origin of stress in radio frequency magnetron sputtered zinc oxide thin films

Rashmi Menon, Vinay Gupta*, H. H. Tan, K. Sreenivas, C. Jagadish

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    63 Citations (Scopus)

    Abstract

    Highly c-axis oriented ZnO thin films have been deposited on silicon substrates by planar rf magnetron sputtering under varying pressure (10-50 mTorr) and oxygen percentage (50-100%) in the reactive gas (Ar + O2) mixture. The as-grown films were found to be stressed over a wide range from -1 × 1011 to -2 × 108 dyne/cm2 that in turn depends strongly on the processing conditions, and the film becomes stress free at a unique combination of sputtering pressure and reactive gas composition. Raman spectroscopy and photoluminescence (PL) analyses identified the origin of stress as lattice distortion due to defects introduced in the ZnO thin film. FTIR study reveals that Zn-O bond becomes stronger with the increase in oxygen fraction in the reactive gas mixture. The lattice distortion or stress depends on the type of defects introduced during deposition. PL spectra show the formation of a shoulder in band emission with an increase in the processing pressure and are related to the presence of stress. The ratio of band emission to defect emission decreases with the increase in oxygen percentage from 50 to 100%. The studies show a correlation of stress with the structural, vibrational, and photoluminescence properties of the ZnO thin film. The systematic study of the stress will help in the fabrication of efficient devices based on ZnO film.

    Original languageEnglish
    Article number064905
    JournalJournal of Applied Physics
    Volume109
    Issue number6
    DOIs
    Publication statusPublished - 15 Mar 2011

    Fingerprint

    Dive into the research topics of 'Origin of stress in radio frequency magnetron sputtered zinc oxide thin films'. Together they form a unique fingerprint.

    Cite this