Origin of thermally activated Er3+ emission in GeGaSe films and waveguides

Wei Wang, Tengxiu Wei, Zheng Zhang, Zhen Yang, Ruixue Liu, Kunlun Yan, Dong Cai, Xinyu Yang, Peipeng Xu, Xunsi Wang, Rongping Wang*

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review


    The origin of the dead or active emission from Er in various Er-doped films has been unclear. Here we took Erdoped GeGaSe as examples and investigated the correlation between the intensity of the photoluminescence (PL) spectra, the content of the activated Er ions, and the intensity of the absorption spectra in the waveguides. We found the linear correlation between the content of Er ions, photoluminescence, and absorption intensity. This provides clear evidence that thermal annealing can promote the conversion of Er metals into Er ions, and such a conversion is essential for practical applications, in which the number of the activated Er ions rather than the nominal Er contents in the materials plays an important role in achieving emission and thus effective optical amplification and lasing.

    Original languageEnglish
    Pages (from-to)5715-5718
    Number of pages4
    JournalOptics Letters
    Issue number21
    Publication statusPublished - 1 Nov 2023


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