Over 1.0 mm-long boron nitride nanotubes

Hua Chen; Ying Chen; Yun Liu; Lan Fu; Cheng Huang; David Llewellyn

doi:10.1016/j.cplett.2008.08.007

Over 1.0 mm-long boron nitride nanotubes

Hua Chen, Ying Chen^*, Yun Liu, Lan Fu, Cheng Huang, David Llewellyn

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 10⁴ Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.

Original language	English
Pages (from-to)	130-133
Number of pages	4
Journal	Chemical Physics Letters
Volume	463
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2008.08.007
Publication status	Published - 22 Sept 2008

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10.1016/j.cplett.2008.08.007

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@article{747a397c23e4448697204e78f8d5894b,

title = "Over 1.0 mm-long boron nitride nanotubes",

abstract = "Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 104 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.",

author = "Hua Chen and Ying Chen and Yun Liu and Lan Fu and Cheng Huang and David Llewellyn",

year = "2008",

month = sep,

day = "22",

doi = "10.1016/j.cplett.2008.08.007",

language = "English",

volume = "463",

pages = "130--133",

journal = "Chemical Physics Letters",

issn = "0009-2614",

publisher = "Elsevier B.V.",

number = "1-3",

}

TY - JOUR

T1 - Over 1.0 mm-long boron nitride nanotubes

AU - Chen, Hua

AU - Chen, Ying

AU - Liu, Yun

AU - Fu, Lan

AU - Huang, Cheng

AU - Llewellyn, David

PY - 2008/9/22

Y1 - 2008/9/22

N2 - Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 104 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.

AB - Over 1.0 mm boron nitride nanotubes (BNNTs) were successfully synthesized by an optimized ball milling and annealing method. The annealing temperature of 1100 °C is crucial for the growth of the long BNNTs because at this temperature there is a fast nitrogen dissolution rate in Fe and the B/N ratio in Fe is 1. Such long BNNTs enable a reliable single tube configuration for electrical property characterization and consequently the average resistivity of the long BNNTs is determined to be 7.1 ± 0.9 × 104 Ω cm. Therefore, these BNNTs are promising insulators for three dimensional microelectromechanical system.

UR - http://www.scopus.com/inward/record.url?scp=51349092348&partnerID=8YFLogxK

U2 - 10.1016/j.cplett.2008.08.007

DO - 10.1016/j.cplett.2008.08.007

M3 - Article

SN - 0009-2614

VL - 463

SP - 130

EP - 133

JO - Chemical Physics Letters

JF - Chemical Physics Letters

IS - 1-3

ER -

Over 1.0 mm-long boron nitride nanotubes

Abstract

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