Overcoming Phosphorus Emitter Limitations in PERC Si Solar Cells by using a Gallium-Phosphide Heteroemitter

Hannes Wagner; Tobias Ohrdes; Amir Dastgheib-Shirazi; Binesh Puthen-Veettil; Dirk Koenig; Pietro P. Altermatt; SIGNAL PROC SOC Ieee

Overcoming Phosphorus Emitter Limitations in PERC Si Solar Cells by using a Gallium-Phosphide Heteroemitter

Hannes Wagner, Tobias Ohrdes, Amir Dastgheib-Shirazi, Binesh Puthen-Veettil, Dirk Koenig, Pietro P. Altermatt, SIGNAL PROC SOC Ieee

Research output: Contribution to conference › Paper › peer-review

Abstract

The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V-oc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

Original language	English
Pages	896-899
Number of pages	4
Publication status	Published - 2013
Externally published	Yes
Event	39th IEEE Photovoltaic Specialists Conference (PVSC) - Tampa Duration: 16 Jun 2013 → 21 Jun 2013

Conference

Conference	39th IEEE Photovoltaic Specialists Conference (PVSC)
City	Tampa
Period	16/06/13 → 21/06/13

Cite this

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abstract = "The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V-oc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.",

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T1 - Overcoming Phosphorus Emitter Limitations in PERC Si Solar Cells by using a Gallium-Phosphide Heteroemitter

AU - Wagner, Hannes

AU - Ohrdes, Tobias

AU - Dastgheib-Shirazi, Amir

AU - Puthen-Veettil, Binesh

AU - Koenig, Dirk

AU - Altermatt, Pietro P.

AU - Ieee, SIGNAL PROC SOC

PY - 2013

Y1 - 2013

N2 - The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V-oc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

AB - The performance of PERC Si solar cells is often limited by recombination in the emitter. We use numerical device simulations to evaluate efficiency limits of different types of phosphorus emitters in an example of a realistic PERC cell. The resulting maximum efficiencies are between 20.5% and 21.2%. The same cell simulated with an emitter made of an n-doped crystalline gallium phosphide layer shows an efficiency limit of 21.6%. This hetero-emitter causes much lower recombination losses than a nearly ideal phosphorus emitter, resulting in a higher V-oc. In addition a lower base doping is necessary which, in turn, reduces the impact of the boron-oxygen complex.

KW - Device simulation

KW - Gallium phosphide

KW - Phosphorus emitter

KW - Silicon

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ER -

Overcoming Phosphorus Emitter Limitations in PERC Si Solar Cells by using a Gallium-Phosphide Heteroemitter

Abstract

Conference

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