Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering

G. G. Marmitt; S. K. Nandi; D. K. Venkatachalam; R. G. Elliman; M. Vos; P. L. Grande

doi:10.1016/j.tsf.2017.03.024

Oxygen diffusion in TiO₂ films studied by electron and ion Rutherford backscattering

G. G. Marmitt^*, S. K. Nandi, D. K. Venkatachalam, R. G. Elliman, M. Vos, P. L. Grande

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

The diffusivity of oxygen in thin, sputter-deposited TiO₂ films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti¹⁶O₂ and Ti¹⁸O₂) and was annealed between 500 °C and 900 °C. The depth profiles of ¹⁸O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Thin Solid Films
Volume	629
DOIs	https://doi.org/10.1016/j.tsf.2017.03.024
Publication status	Published - 1 May 2017

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title = "Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering",

abstract = "The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.",

keywords = "Diffusion, Electron-RBS, RBS",

author = "Marmitt, {G. G.} and Nandi, {S. K.} and Venkatachalam, {D. K.} and Elliman, {R. G.} and M. Vos and Grande, {P. L.}",

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T1 - Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering

AU - Marmitt, G. G.

AU - Nandi, S. K.

AU - Venkatachalam, D. K.

AU - Elliman, R. G.

AU - Vos, M.

AU - Grande, P. L.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

AB - The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

KW - Diffusion

KW - Electron-RBS

KW - RBS

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DO - 10.1016/j.tsf.2017.03.024

M3 - Article

SN - 0040-6090

VL - 629

SP - 97

EP - 102

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Oxygen diffusion in TiO₂ films studied by electron and ion Rutherford backscattering

Abstract

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