Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering

G. G. Marmitt; S. K. Nandi; D. K. Venkatachalam; R. G. Elliman; M. Vos; P. L. Grande

doi:10.1016/j.tsf.2017.03.024

Oxygen diffusion in TiO₂ films studied by electron and ion Rutherford backscattering

G. G. Marmitt^*
, S. K. Nandi
, D. K. Venkatachalam
, R. G. Elliman
, M. Vos
, P. L. Grande

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

The diffusivity of oxygen in thin, sputter-deposited TiO₂ films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti¹⁶O₂ and Ti¹⁸O₂) and was annealed between 500 °C and 900 °C. The depth profiles of ¹⁸O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

Original language	English
Pages (from-to)	97-102
Number of pages	6
Journal	Thin Solid Films
Volume	629
DOIs	https://doi.org/10.1016/j.tsf.2017.03.024
Publication status	Published - 1 May 2017

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title = "Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering",

abstract = "The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.",

keywords = "Diffusion, Electron-RBS, RBS",

author = "Marmitt, \{G. G.\} and Nandi, \{S. K.\} and Venkatachalam, \{D. K.\} and Elliman, \{R. G.\} and M. Vos and Grande, \{P. L.\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier B.V.",

year = "2017",

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doi = "10.1016/j.tsf.2017.03.024",

language = "English",

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TY - JOUR

T1 - Oxygen diffusion in TiO2 films studied by electron and ion Rutherford backscattering

AU - Marmitt, G. G.

AU - Nandi, S. K.

AU - Venkatachalam, D. K.

AU - Elliman, R. G.

AU - Vos, M.

AU - Grande, P. L.

PY - 2017/5/1

Y1 - 2017/5/1

N2 - The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

AB - The diffusivity of oxygen in thin, sputter-deposited TiO2 films, as can be used in RRAMs, is measured using electron and ion backscattering techniques. The as-grown sample consisted of two layers (Ti16O2 and Ti18O2) and was annealed between 500 °C and 900 °C. The depth profiles of 18O, as measured with both techniques, were similar. The extent of diffusion was much larger than expected from the literature data for O diffusion in single-crystal rutile, suggesting that defects in the sputter-deposited film play an essential role in the diffusion process.

KW - Diffusion

KW - Electron-RBS

KW - RBS

UR - https://www.scopus.com/pages/publications/85016984271

U2 - 10.1016/j.tsf.2017.03.024

DO - 10.1016/j.tsf.2017.03.024

M3 - Article

SN - 0040-6090

VL - 629

SP - 97

EP - 102

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Oxygen diffusion in TiO₂ films studied by electron and ion Rutherford backscattering

Abstract

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