p Inversion layer SI solar cells as test for the I^Γ-S structure (poster): Results and prospects

The Γ^-S structure is a novel layer arrangement serving as a source for a negative drift field. Its application to solar cells is manifold and does not depend on Si. The deposition of the Aluminium Fluoride (AlF ₃) layer involved can be implemented as final process in solar cell production; thus compatibility to existing processing sequences is given. First prototypes of a p inversion layer solar cell on Si were prepared providing evidence of function for the I^-S structure. While conditions of preparation were far from optimum, a relative increase in conversion efficiency of 21 % was achieved for solar cells with I^-S structure versa solar cells without it. For testing the field effect impact the AlF₃ layer thickness was chosen to be 15 nm thus eliminating its additional advantage as anti-reflective coating (ARC).