TY - GEN
T1 - Parameterization of carrier mobility sum in silicon as a function of doping, temperature and injection level
T2 - 40th IEEE Photovoltaic Specialist Conference, PVSC 2014
AU - Zheng, P.
AU - Rougieux, F. E.
AU - Macdonald, D.
AU - Cuevas, A.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2014/10/15
Y1 - 2014/10/15
N2 - Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1μ.cm to 100.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for p-type silicon wafers from 150K to 450K and show that they are consistent with this parameterization. We show that our parameterization of the mobility sum in silicon is valid for both p-and n-type silicon for various carrier injection, wafer doping and temperature from 150K to 450K. The new parameterization is also an experimental validation of Klaassen's and Dorkel-Leturcq's models under carrier injection at different temperatures.
AB - Based on contactless photoconductance measurements of silicon wafers, we have determined the sum of electron and hole mobilities as a function of doping, excess carrier concentration, and temperature. By using data measured on n-type silicon wafers with resistivity from 1μ.cm to 100.cm, we have previously developed a simple mathematical expression to describe the mobility sum as a function of carrier injection, wafer doping and temperature. In this paper, we provide experimental results for p-type silicon wafers from 150K to 450K and show that they are consistent with this parameterization. We show that our parameterization of the mobility sum in silicon is valid for both p-and n-type silicon for various carrier injection, wafer doping and temperature from 150K to 450K. The new parameterization is also an experimental validation of Klaassen's and Dorkel-Leturcq's models under carrier injection at different temperatures.
KW - charge carrier mobility
KW - mobility sum
KW - silicon
KW - temperature and injection dependent
UR - http://www.scopus.com/inward/record.url?scp=84912105899&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2014.6925391
DO - 10.1109/PVSC.2014.6925391
M3 - Conference contribution
T3 - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
SP - 129
EP - 134
BT - 2014 IEEE 40th Photovoltaic Specialist Conference, PVSC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 8 June 2014 through 13 June 2014
ER -