Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications

P Lecouvreur; J Larrieu; N Naude; Sebastien Quoizola; S Pouliquen; C Picard; E Beche; N Bererd; N Gherardi; R Monna; Marko Pirot; D Jahan; Andres Cuevas; F Massines

doi:10.4229/23rdEUPVSEC2008-2CV.5.2

Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications

P Lecouvreur, J Larrieu, N Naude, Sebastien Quoizola, S Pouliquen, C Picard, E Beche, N Bererd, N Gherardi, R Monna, Marko Pirot, D Jahan, Andres Cuevas, F Massines

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	Proceedings of the European Photovoltaic Solar Energy Conference 2008
Editors	Conference Program Committee
Place of Publication	Munich
Publisher	Conference Organising Committee
Pages	1581 - 1585
Edition	Peer Reviewed
DOIs	https://doi.org/10.4229/23rdEUPVSEC2008-2CV.5.2
Publication status	Published - 2008
Event	23rd European Photovoltaic Solar Energy Conference 2008 - Valencia, Spain Duration: 1 Sept 2008 → 4 Sept 2008 Conference number: 23

Conference

Conference	23rd European Photovoltaic Solar Energy Conference 2008
Abbreviated title	2008 EUPVSEC
Country/Territory	Spain
City	Valencia
Period	1/09/08 → 4/09/08
Other	September 1-4 2008

Access to Document

10.4229/23rdEUPVSEC2008-2CV.5.2

Cite this

Lecouvreur, P., Larrieu, J., Naude, N., Quoizola, S., Pouliquen, S., Picard, C., Beche, E., Bererd, N., Gherardi, N., Monna, R., Pirot, M., Jahan, D., Cuevas, A., & Massines, F. (2008). Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications. In C. P. C. (Ed.), Proceedings of the European Photovoltaic Solar Energy Conference 2008 (Peer Reviewed ed., pp. 1581 - 1585). Conference Organising Committee. https://doi.org/10.4229/23rdEUPVSEC2008-2CV.5.2

Lecouvreur, P ; Larrieu, J ; Naude, N et al. / Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications. Proceedings of the European Photovoltaic Solar Energy Conference 2008. editor / Conference Program Committee. Peer Reviewed. ed. Munich : Conference Organising Committee, 2008. pp. 1581 - 1585

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title = "Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications",

author = "P Lecouvreur and J Larrieu and N Naude and Sebastien Quoizola and S Pouliquen and C Picard and E Beche and N Bererd and N Gherardi and R Monna and Marko Pirot and D Jahan and Andres Cuevas and F Massines",

year = "2008",

doi = "10.4229/23rdEUPVSEC2008-2CV.5.2",

language = "English",

pages = "1581 -- 1585",

editor = "{Conference Program Committee}",

booktitle = "Proceedings of the European Photovoltaic Solar Energy Conference 2008",

publisher = "Conference Organising Committee",

edition = "Peer Reviewed",

note = "23rd European Photovoltaic Solar Energy Conference 2008, 2008 EUPVSEC ; Conference date: 01-09-2008 Through 04-09-2008",

}

Lecouvreur, P, Larrieu, J, Naude, N, Quoizola, S, Pouliquen, S, Picard, C, Beche, E, Bererd, N, Gherardi, N, Monna, R, Pirot, M, Jahan, D, Cuevas, A & Massines, F 2008, Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications. in CPC (ed.), Proceedings of the European Photovoltaic Solar Energy Conference 2008. Peer Reviewed edn, Conference Organising Committee, Munich, pp. 1581 - 1585, 23rd European Photovoltaic Solar Energy Conference 2008, Valencia, Spain, 1/09/08. https://doi.org/10.4229/23rdEUPVSEC2008-2CV.5.2

Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications. / Lecouvreur, P; Larrieu, J; Naude, N et al.
Proceedings of the European Photovoltaic Solar Energy Conference 2008. ed. / Conference Program Committee. Peer Reviewed. ed. Munich: Conference Organising Committee, 2008. p. 1581 - 1585.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications

AU - Lecouvreur, P

AU - Larrieu, J

AU - Naude, N

AU - Quoizola, Sebastien

AU - Pouliquen, S

AU - Picard, C

AU - Beche, E

AU - Bererd, N

AU - Gherardi, N

AU - Monna, R

AU - Pirot, Marko

AU - Jahan, D

AU - Cuevas, Andres

AU - Massines, F

N1 - Conference code: 23

PY - 2008

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U2 - 10.4229/23rdEUPVSEC2008-2CV.5.2

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M3 - Conference contribution

SP - 1581

EP - 1585

BT - Proceedings of the European Photovoltaic Solar Energy Conference 2008

A2 - null, Conference Program Committee

PB - Conference Organising Committee

CY - Munich

T2 - 23rd European Photovoltaic Solar Energy Conference 2008

Y2 - 1 September 2008 through 4 September 2008

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Lecouvreur P, Larrieu J, Naude N, Quoizola S, Pouliquen S, Picard C et al. Passivating and Physico-Chemical Properties of Silicon Nitride Deposited by Atmospheric Pressure Plasma for Photovoltaic Applications. In CPC, editor, Proceedings of the European Photovoltaic Solar Energy Conference 2008. Peer Reviewed ed. Munich: Conference Organising Committee. 2008. p. 1581 - 1585 doi: 10.4229/23rdEUPVSEC2008-2CV.5.2