Passivation of highly boron doped silicon surfaces by sputtered AlO x and PECVD SiN, a comparison

T. T.A. Li; A. Cuevas; J. Tan; C. Samundsett; D. Saynova; B. Geerligs

doi:10.1109/COMMAD.2010.5699694

Passivation of highly boron doped silicon surfaces by sputtered AlO _x and PECVD SiN, a comparison

T. T.A. Li, A. Cuevas, J. Tan, C. Samundsett, D. Saynova, B. Geerligs

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We show that boron-diffused emitters can be passivated with AlO_x deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO₂ interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of J_oE=228-349 fA/cm² for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.

Original language	English
Title of host publication	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings
Pages	125-126
Number of pages	2
DOIs	https://doi.org/10.1109/COMMAD.2010.5699694
Publication status	Published - 2010
Event	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 - Canberra, ACT, Australia Duration: 12 Dec 2010 → 15 Dec 2010

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010
Country/Territory	Australia
City	Canberra, ACT
Period	12/12/10 → 15/12/10

Access to Document

10.1109/COMMAD.2010.5699694

Cite this

Li, T. T. A., Cuevas, A., Tan, J., Samundsett, C., Saynova, D., & Geerligs, B. (2010). Passivation of highly boron doped silicon surfaces by sputtered AlO _x and PECVD SiN, a comparison. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings (pp. 125-126). Article 5699694 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2010.5699694

@inproceedings{70e25d289e7e4b99a42c5d311803fae0,

title = "Passivation of highly boron doped silicon surfaces by sputtered AlO x and PECVD SiN, a comparison",

abstract = "We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.",

author = "Li, {T. T.A.} and A. Cuevas and J. Tan and C. Samundsett and D. Saynova and B. Geerligs",

year = "2010",

doi = "10.1109/COMMAD.2010.5699694",

language = "English",

isbn = "9781424473328",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "125--126",

booktitle = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings",

note = "2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 ; Conference date: 12-12-2010 Through 15-12-2010",

}

Li, TTA, Cuevas, A, Tan, J, Samundsett, C, Saynova, D & Geerligs, B 2010, Passivation of highly boron doped silicon surfaces by sputtered AlO _x and PECVD SiN, a comparison. in 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings., 5699694, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 125-126, 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010, Canberra, ACT, Australia, 12/12/10. https://doi.org/10.1109/COMMAD.2010.5699694

Passivation of highly boron doped silicon surfaces by sputtered AlO _x and PECVD SiN, a comparison. / Li, T. T.A.; Cuevas, A.; Tan, J. et al.
2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 125-126 5699694 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Passivation of highly boron doped silicon surfaces by sputtered AlO x and PECVD SiN, a comparison

AU - Li, T. T.A.

AU - Cuevas, A.

AU - Tan, J.

AU - Samundsett, C.

AU - Saynova, D.

AU - Geerligs, B.

PY - 2010

Y1 - 2010

N2 - We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.

AB - We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2 for sheet resistances of 88-210 Ω/□, are already consistent with solar cell with efficiencies in the 20% range.

UR - http://www.scopus.com/inward/record.url?scp=79951760212&partnerID=8YFLogxK

U2 - 10.1109/COMMAD.2010.5699694

DO - 10.1109/COMMAD.2010.5699694

M3 - Conference contribution

SN - 9781424473328

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 125

EP - 126

BT - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings

T2 - 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010

Y2 - 12 December 2010 through 15 December 2010

ER -

Li TTA, Cuevas A, Tan J, Samundsett C, Saynova D, Geerligs B. Passivation of highly boron doped silicon surfaces by sputtered AlO _x and PECVD SiN, a comparison. In 2010 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2010 Proceedings. 2010. p. 125-126. 5699694. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2010.5699694