Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen

A. R. Wilkinson; R. G. Elliman

doi:10.1063/1.1637130

Passivation of Si nanocrystals in SiO₂: Atomic versus molecular hydrogen

A. R. Wilkinson^*, R. G. Elliman

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

56 Citations (Scopus)

Abstract

The effect of atomic and molecular hydrogen on the passivation of Si nanocrystals in SiO₂ was investigated using photoluminescence measurements. The thermal annealing was found to achieve high levels of Si nanocrystal passivation, resulting in increased PL intensity compared to standard forming gas annealing. The data were found to be consistent with the presence of at least two different recombination centers at the nanocrystal/SiO₂ interface. The method enables improved passivation to be achieved with extra processing over the standard passivation process for Si nanocrystals.

Original language	English
Pages (from-to)	5512-5514
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	26
DOIs	https://doi.org/10.1063/1.1637130
Publication status	Published - 29 Dec 2003

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AB - The effect of atomic and molecular hydrogen on the passivation of Si nanocrystals in SiO2 was investigated using photoluminescence measurements. The thermal annealing was found to achieve high levels of Si nanocrystal passivation, resulting in increased PL intensity compared to standard forming gas annealing. The data were found to be consistent with the presence of at least two different recombination centers at the nanocrystal/SiO2 interface. The method enables improved passivation to be achieved with extra processing over the standard passivation process for Si nanocrystals.

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Passivation of Si nanocrystals in SiO₂: Atomic versus molecular hydrogen

Abstract

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