Pd-vacancy complex in Si identified with the perturbed angular correlation technique

A Pd-vacancy (Pd-V-) complex in Si has been identified with the perturbed angular correlation technique using the radioactive Pd100 probe produced by recoil implantation. The fraction of Pd probes in the complex has been determined as a function of dopant type (B, P, As, and Sb), dopant concentration (1015-6×1019cm-3) and annealing temperature (21-500°C). The Pd-V- complex, with a unique interaction frequency of 13.1(2)MHz, was observed only in n+-Si with a maximum relative fraction of ∼52% achieved between 200-300°C while a broad distribution of interaction frequencies was apparent in n-, p-, and p+-Si. Annealing beyond 300°C yielded a reduction in the Pd-V- fraction with a dissociation energy of 2.5(7)eV. Density functional theory calculations of the electric field gradient for the given defect configuration were consistent with a measured value of 3.58×1021V m2.