Phase change behaviors of Zn-doped Ge 2Sb 2Te 5 films

Guoxiang Wang; Qiuhua Nie; Xiang Shen; R. P. Wang; Liangcai Wu; Jing Fu; Tiefeng Xu; Shixun Dai

doi:10.1063/1.4742144

Phase change behaviors of Zn-doped Ge ₂Sb ₂Te ₅ films

Guoxiang Wang^*, Qiuhua Nie, Xiang Shen, R. P. Wang, Liangcai Wu, Jing Fu, Tiefeng Xu, Shixun Dai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

77 Citations (Scopus)

Abstract

Zn-doped Ge ₂Sb ₂Te ₅ phase-change materials have been investigated for phase change memory applications. Zn _15.16(Ge ₂Sb ₂Te ₅) _84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge ₂Sb ₂Te ₅. The proper Zn atom added into Ge ₂Sb ₂Te ₅ serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

Original language	English
Article number	051906
Journal	Applied Physics Letters
Volume	101
Issue number	5
DOIs	https://doi.org/10.1063/1.4742144
Publication status	Published - 30 Jul 2012

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title = "Phase change behaviors of Zn-doped Ge 2Sb 2Te 5 films",

abstract = "Zn-doped Ge 2Sb 2Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16(Ge 2Sb 2Te 5) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2Sb 2Te 5. The proper Zn atom added into Ge 2Sb 2Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.",

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T1 - Phase change behaviors of Zn-doped Ge 2Sb 2Te 5 films

AU - Wang, Guoxiang

AU - Nie, Qiuhua

AU - Shen, Xiang

AU - Wang, R. P.

AU - Wu, Liangcai

AU - Fu, Jing

AU - Xu, Tiefeng

AU - Dai, Shixun

PY - 2012/7/30

Y1 - 2012/7/30

N2 - Zn-doped Ge 2Sb 2Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16(Ge 2Sb 2Te 5) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2Sb 2Te 5. The proper Zn atom added into Ge 2Sb 2Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

AB - Zn-doped Ge 2Sb 2Te 5 phase-change materials have been investigated for phase change memory applications. Zn 15.16(Ge 2Sb 2Te 5) 84.84 phase change film exhibits a higher crystallization temperature (∼258 °C), wider band gap (∼0.78 eV), better data retention of 10 years at 167.5 °C, higher crystalline resistance, and faster crystallization speed compared with the conventional Ge 2Sb 2Te 5. The proper Zn atom added into Ge 2Sb 2Te 5 serves as a center for suppression of the face-centered-cubic (fcc) phase to hexagonal close-packed (hcp) phase transition, and fcc phase has high thermal stability partially due to the bond recombination among Zn, Sb, and Te atoms.

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Phase change behaviors of Zn-doped Ge ₂Sb ₂Te ₅ films

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