Phosphorus-doped polycrystalline silicon passivating contacts via spin-on doping

Zetao Ding*, Di Yan, Josua Stuckelberger, Sieu Pheng Phang, Wenhao Chen, Christian Samundsett, Jie Yang, Zhao Wang, Peiting Zheng, Xinyu Zhang, Yimao Wan, Daniel Macdonald

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    12 Citations (Scopus)

    Abstract

    Polycrystalline silicon (poly-Si) passivating contacts are promising technologies to promote the efficiency of silicon solar cells, due to their low carrier recombination and low contact resistivity. In this work, we present phosphorus spin-on doping as an alternative doping method to fabricate high performance poly-Si passivating contacts. The influences of thermal treatments and intrinsic amorphous Si thickness on poly-Si passivating contact quality were investigated. A high implied open-circuit voltage of above 730 mV together with a low contact resistivity below 4 mΩ⋅cm2 were obtained for 100 – 230 nm thick poly-Si layers after a thermal treatment at 975 °C for 60 min followed by a forming gas annealing. The promising results presented in this work imply that phosphorus spin-on doping can be an effective doping method alternative to conventional POCl3 diffusion.

    Original languageEnglish
    Article number110902
    JournalSolar Energy Materials and Solar Cells
    Volume221
    DOIs
    Publication statusPublished - Mar 2021

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