Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

C. M. Yin; M. Rancic; N. Stavrias; G. G. De Boo; J. C. McCallum; M. J. Sellars; S. Rogge

doi:10.1109/COMMAD.2012.6472428

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

C. M. Yin, M. Rancic, N. Stavrias, G. G. De Boo, J. C. McCallum, M. J. Sellars, S. Rogge^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.

Original language	English
Title of host publication	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings
Pages	197
Number of pages	1
DOIs	https://doi.org/10.1109/COMMAD.2012.6472428
Publication status	Published - 2012
Externally published	Yes
Event	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Melbourne, VIC, Australia Duration: 12 Dec 2012 → 14 Dec 2012

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Conference

Conference	2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012
Country/Territory	Australia
City	Melbourne, VIC
Period	12/12/12 → 14/12/12

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10.1109/COMMAD.2012.6472428

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Yin, C. M., Rancic, M., Stavrias, N., De Boo, G. G., McCallum, J. C., Sellars, M. J., & Rogge, S. (2012). Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings (pp. 197). Article 6472428 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2012.6472428

@inproceedings{7625e4654c9e4342b8ad2f00c9ab3238,

title = "Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor",

abstract = "We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.",

author = "Yin, {C. M.} and M. Rancic and N. Stavrias and {De Boo}, {G. G.} and McCallum, {J. C.} and Sellars, {M. J.} and S. Rogge",

year = "2012",

doi = "10.1109/COMMAD.2012.6472428",

language = "English",

isbn = "9781467330459",

series = "Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD",

pages = "197",

booktitle = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings",

note = "2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 ; Conference date: 12-12-2012 Through 14-12-2012",

}

Yin, CM, Rancic, M, Stavrias, N, De Boo, GG, McCallum, JC, Sellars, MJ & Rogge, S 2012, Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor. in 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings., 6472428, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 197, 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012, Melbourne, VIC, Australia, 12/12/12. https://doi.org/10.1109/COMMAD.2012.6472428

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor. / Yin, C. M.; Rancic, M.; Stavrias, N. et al.
2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 197 6472428 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

AU - Yin, C. M.

AU - Rancic, M.

AU - Stavrias, N.

AU - De Boo, G. G.

AU - McCallum, J. C.

AU - Sellars, M. J.

AU - Rogge, S.

PY - 2012

Y1 - 2012

N2 - We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.

AB - We show the photo-ionisation of an individual erbium centre in silicon. A single-electron transistor is used as a charge detector to observe the resonant ionization as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium centres with exceptionally narrow line width.

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U2 - 10.1109/COMMAD.2012.6472428

DO - 10.1109/COMMAD.2012.6472428

M3 - Conference contribution

SN - 9781467330459

T3 - Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

SP - 197

BT - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings

T2 - 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012

Y2 - 12 December 2012 through 14 December 2012

ER -

Yin CM, Rancic M, Stavrias N, De Boo GG, McCallum JC, Sellars MJ et al. Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor. In 2012 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2012 - Proceedings. 2012. p. 197. 6472428. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2012.6472428

Photo-ionisation spectra of single erbium centres by charge sensing with a nano transistor

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