Photocarrier lifetime and transport in silicon supersaturated with sulfur

Peter D. Persans; Nathaniel E. Berry; Daniel Recht; David Hutchinson; Hannah Peterson; Jessica Clark; Supakit Charnvanichborikarn; James S. Williams; Anthony Difranzo; Michael J. Aziz; Jeffrey M. Warrender

doi:10.1063/1.4746752

Photocarrier lifetime and transport in silicon supersaturated with sulfur

Peter D. Persans^*, Nathaniel E. Berry, Daniel Recht, David Hutchinson, Hannah Peterson, Jessica Clark, Supakit Charnvanichborikarn, James S. Williams, Anthony Difranzo, Michael J. Aziz, Jeffrey M. Warrender

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10 ^-8 cm ²/V for heavily sulfur doped silicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.

Original language	English
Article number	111105
Journal	Applied Physics Letters
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.4746752
Publication status	Published - 10 Sept 2012

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@article{9638102d77d34316b622a2950513881a,

title = "Photocarrier lifetime and transport in silicon supersaturated with sulfur",

abstract = "Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10 -8 cm 2/V for heavily sulfur doped silicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.",

author = "Persans, {Peter D.} and Berry, {Nathaniel E.} and Daniel Recht and David Hutchinson and Hannah Peterson and Jessica Clark and Supakit Charnvanichborikarn and Williams, {James S.} and Anthony Difranzo and Aziz, {Michael J.} and Warrender, {Jeffrey M.}",

year = "2012",

month = sep,

day = "10",

doi = "10.1063/1.4746752",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Photocarrier lifetime and transport in silicon supersaturated with sulfur

AU - Persans, Peter D.

AU - Berry, Nathaniel E.

AU - Recht, Daniel

AU - Hutchinson, David

AU - Peterson, Hannah

AU - Clark, Jessica

AU - Charnvanichborikarn, Supakit

AU - Williams, James S.

AU - Difranzo, Anthony

AU - Aziz, Michael J.

AU - Warrender, Jeffrey M.

PY - 2012/9/10

Y1 - 2012/9/10

N2 - Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10 -8 cm 2/V for heavily sulfur doped silicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.

AB - Doping of silicon-on-insulator layers with sulfur to concentrations far above equilibrium by ion implantation and pulsed laser melting can result in large concentration gradients. Photocarriers generated in and near the impurity gradient can separate into different coplanar transport layers, leading to enhanced photocarrier lifetimes in thin silicon-on-insulator films. The depth from which holes escape the heavily doped region places a lower limit on the minority carrier mobility-lifetime product of 10 -8 cm 2/V for heavily sulfur doped silicon. We conclude that the cross-section for recombination through S impurities at this concentration is significantly reduced relative to isolated impurities.

UR - http://www.scopus.com/inward/record.url?scp=84866339170&partnerID=8YFLogxK

U2 - 10.1063/1.4746752

DO - 10.1063/1.4746752

M3 - Article

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111105

ER -

Photocarrier lifetime and transport in silicon supersaturated with sulfur

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