Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system

X. F. Wei, W. Xu*, Z. Zeng, C. Zhang

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected to a light field, conductance can be observed along the growth direction due to charge transfer between electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.

    Original languageEnglish
    Pages (from-to)544-546
    Number of pages3
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume4
    Issue number2
    DOIs
    Publication statusPublished - 2007
    EventInternational Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey
    Duration: 30 Jul 20064 Aug 2006

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