Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system

X. F. Wei; W. Xu; Z. Zeng; C. Zhang

doi:10.1002/pssc.200673347

Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system

X. F. Wei
, W. Xu^*
, Z. Zeng
, C. Zhang

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected to a light field, conductance can be observed along the growth direction due to charge transfer between electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.

Original language	English
Pages (from-to)	544-546
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	4
Issue number	2
DOIs	https://doi.org/10.1002/pssc.200673347
Publication status	Published - 2007
Event	International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 - Istanbul, Turkey Duration: 30 Jul 2006 → 4 Aug 2006

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@article{a1ed1e00671a48fc838807f70979e56e,

title = "Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system",

abstract = "We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected to a light field, conductance can be observed along the growth direction due to charge transfer between electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.",

author = "Wei, \{X. F.\} and W. Xu and Z. Zeng and C. Zhang",

year = "2007",

doi = "10.1002/pssc.200673347",

language = "English",

volume = "4",

pages = "544--546",

journal = "Physica Status Solidi (C) Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag GmbH",

number = "2",

note = "International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006 ; Conference date: 30-07-2006 Through 04-08-2006",

}

TY - JOUR

T1 - Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system

AU - Wei, X. F.

AU - Xu, W.

AU - Zeng, Z.

AU - Zhang, C.

PY - 2007

Y1 - 2007

N2 - We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected to a light field, conductance can be observed along the growth direction due to charge transfer between electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.

AB - We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected to a light field, conductance can be observed along the growth direction due to charge transfer between electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.

UR - https://www.scopus.com/pages/publications/50049131489

U2 - 10.1002/pssc.200673347

DO - 10.1002/pssc.200673347

M3 - Conference article

SN - 1862-6351

VL - 4

SP - 544

EP - 546

JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

IS - 2

T2 - International Conference on Superlattices, Nano-structures and Nano-devices, ICSNN-2006

Y2 - 30 July 2006 through 4 August 2006

ER -

Photocurrent induced by intersubband transition in a type II and broken-gan quantum well system

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