Photodegradation of surface passivated GaAs nanowires

P. A. Alekseev; A. N. Smirnov; V. Yu Davydov; T. Haggrén; H. Lipsanen; M. S. Dunaevskiy; V. L. Berkovits

doi:10.1088/1742-6596/1461/1/012002

Photodegradation of surface passivated GaAs nanowires

P. A. Alekseev, A. N. Smirnov, V. Yu Davydov, T. Haggrén, H. Lipsanen, M. S. Dunaevskiy, V. L. Berkovits

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p⁺ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm², respectively.

Original language	English
Article number	012002
Journal	Journal of Physics: Conference Series
Volume	1461
Issue number	1
DOIs	https://doi.org/10.1088/1742-6596/1461/1/012002
Publication status	Published - 23 Apr 2020
Externally published	Yes
Event	4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 - St. Petersburg, Russian Federation Duration: 15 Jul 2019 → 19 Jul 2019

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title = "Photodegradation of surface passivated GaAs nanowires",

abstract = "Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.",

author = "Alekseev, {P. A.} and Smirnov, {A. N.} and Davydov, {V. Yu} and T. Haggr{\'e}n and H. Lipsanen and Dunaevskiy, {M. S.} and Berkovits, {V. L.}",

note = "Publisher Copyright: {\textcopyright} 2020 IOP Publishing Ltd.; 4th International Conference on Metamaterials and Nanophotonics, METANANO 2019 ; Conference date: 15-07-2019 Through 19-07-2019",

year = "2020",

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day = "23",

doi = "10.1088/1742-6596/1461/1/012002",

language = "English",

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journal = "Journal of Physics: Conference Series",

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TY - JOUR

T1 - Photodegradation of surface passivated GaAs nanowires

AU - Alekseev, P. A.

AU - Smirnov, A. N.

AU - Davydov, V. Yu

AU - Haggrén, T.

AU - Lipsanen, H.

AU - Dunaevskiy, M. S.

AU - Berkovits, V. L.

PY - 2020/4/23

Y1 - 2020/4/23

N2 - Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.

AB - Efficiency of in situ AlGaAs and GaP and ex situ nitride surface passivation of p+ GaAs nanowires was studied. The efficiency was estimated by comparing of the photoluminescence intensity of the passivated nanowires with the unpassivated nanowire. The AlGaAs and nitride passivation lead to the increasing of the PL intensity by three orders of magnitude while the GaP passivation increases PL intensity only by one order. Photodegradation of the passivated NWs under intensive laser illumination was observed. AlGaAs, GaP and nitride passivated NWs photodegrade after one-minute exposure under laser power densities of 500, 300 and 30 kW/cm2, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85084159605&partnerID=8YFLogxK

U2 - 10.1088/1742-6596/1461/1/012002

DO - 10.1088/1742-6596/1461/1/012002

M3 - Conference article

AN - SCOPUS:85084159605

SN - 1742-6588

VL - 1461

JO - Journal of Physics: Conference Series

JF - Journal of Physics: Conference Series

IS - 1

M1 - 012002

T2 - 4th International Conference on Metamaterials and Nanophotonics, METANANO 2019

Y2 - 15 July 2019 through 19 July 2019

ER -

Photodegradation of surface passivated GaAs nanowires

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